AO4812
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4812 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters.
AO4812 is Pb-free (meets ROHS & Sony
259 specifications). AO4812L is a Green Product
ordering option. AO4812 and AO4812L are
electrically identical.
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 42mΩ (V
GS
= 4.5V)
D1
S2
G2
S1
G1
D2
D2
D1
D1
D2
1
2
3
4
8
7
6
5
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
30
±20
6.9
5.8
30
2
1.44
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4812
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=6.9A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5.0A
Forward Transconductance
V
DS
=5V, I
D
=6.9A
10
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
T
J
=125°C
1
20
22.5
31.3
34.5
15.4
0.76
1
3
680
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
102
77
3
13.84
V
GS
=10V, V
DS
=15V, I
D
=6.9A
6.74
1.82
3.2
4.6
V
GS
=10V, V
DS
=15V, R
L
=2.2Ω,
R
GEN
=3Ω
I
F
=6.9A, dI/dt=100A/µs
4.1
20.6
5.2
16.5
7.8
7
6.2
30
7.5
20
10
3.6
17
8.1
820
28
38
42
1.9
Min
30
0.004
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=6.9A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
6V
5V
4.5V
20
16
12
V
DS
=5V
4V
I
D
(A)
15
3.5V
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
=3V
8
125°C
4
25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
60
50
R
DS(ON)
(m
Ω
)
40
30
20
10
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=4.5V
Normalized On-Resistance
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
I
D
=5A
V
GS
=10V
V
GS
=10V
70
60
50
40
30
125°C
1.0E+01
I
D
=5A
I
S
Amps
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
125°C
R
DS(ON)
(m
Ω
)
20
10
2
4
6
25°C
1.0E-05
0.0
8
10
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
1000
V
DS
=15V
I
D
=6.9A
Capacitance (pF)
900
800
700
600
500
400
300
200
100
0
0
C
rss
5
10
15
20
25
30
C
oss
C
iss
f=1MHz
V
GS
=0V
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
R
DS(ON)
limited
10
I
D
(Amps)
1ms
10ms
0.1s
1
1s
10s
DC
0.1
0.1
1
V
DS
(Volts)
10
T
J(Max)
=150°C
T
A
=25°C
100µs
10µs
Power W
40
T
J(Max)
=150°C
T
A
=25°C
30
20
10
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
100
1000
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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