2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1076-0400
(Previous: ADE-208-747B)
Rev.4.00
Sep 07, 2005
Features
•
Low on-resistance
R
DS (on)
= 11.5 mΩ typ.
•
High speed switching
•
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
1
2
S
3
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK3151
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
100
±20
50
200
50
50
250
125
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
±20
—
—
1.0
—
—
30
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
11.5
16
50
4000
1650
590
30
280
830
450
0.95
100
Max
—
—
±10
10
2.5
15
25
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V
Note4
I
D
= 25 A, V
GS
= 4 V
Note4
I
D
= 25 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 25 A, V
GS
= 10 V,
R
L
= 1.2
Ω
I
F
= 50 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0
di
F
/ dt = 50 A/
µs
Rev.4.00 Sep 07, 2005 page 2 of 7
2SK3151
Main Characteristics
Power vs. Temperature Derating
160
1000
300
100
30
10
3
1
50
100
150
200
1
DC
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
120
Drain Current I
D
(A)
80
Op
=
er
a
10
10
µ
s
10
0
µ
s
1
m
s
m
s(
1
sh
tio
40
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
2
5
10
n
(T
c=
ot
)
25
°
C
)
0
20
50 100 200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
V
GS
= 10 V
Typical Transfer Characteristics
100
Pulse Test
Drain Current I
D
(A)
3V
30
3.5 V
Drain Current I
D
(A)
40
4V
80
V
DS
= 10 V
Pulse Test
60
20
2.5 V
10
2V
0
2
4
6
8
10
40
75°C
Tc = –25°C
20
25°C
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Pulse Test
50
V
GS
= 4 V
0.8
I
D
= 50 A
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
0.6
20
10
0.4
20 A
0.2
10 A
10 V
5
2
1
1
2
5
10
20
50 100 200
0
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 7
2SK3151
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
50
Pulse Test
40
10,20 A
30
I
D
= 50 A
50 A
20
4V
10, 20 A
10
0
–50
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
Tc = –25°C
25°C
V
DS
= 10 V
Pulse Test
0
50
100
150
200
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
30000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
10000
Ciss
3000
1000
200
100
50
20
10
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Coss
Crss
300
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 50 A
V
DD
= 100 V
50 V
25 V
V
DS
V
GS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
5000
td(off)
tf
tr
200
160
16
Switching Time t (ns)
1000
500
200
100
50
20
10
0.1 0.2
120
12
80
8
40
V
DD
= 100 V
50 V
25 V
4
0
400
td(on)
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0
80
160
240
320
0.5 1
2
5 10 20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 7
2SK3151
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
(A)
50
10 V
40
250
I
AP
= 50 A
V
DD
= 50 V
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
200
30
V
GS
= 0, –5 V
150
20
5V
100
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
50
0
25
50
75
100
125
150
Source to Drain Voltage
V
SDF
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t)
• θ
ch – c
θ
ch – c = 1.0°C/W, Tc = 25°C
PDM
PW
T
0.03
0.02
1
lse
0.0
t pu
ho
1s
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
PW (S)
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
I
D
Vin
15 V
50
Ω
0
V
DD
Rev.4.00 Sep 07, 2005 page 5 of 7
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