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SM532028012F3G6

Description
DRAM
Categorystorage    storage   
File Size225KB,25 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM532028012F3G6 Overview

DRAM

SM532028012F3G6 Parametric

Parameter NameAttribute value
Objectid110128558
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
SMART
Features
®
SM5320280UUFUGU
Preliminary
Modular Technologies
8MByte (2M x 32) DRAM Module - 2Mx8 based
100-pin DIMM, Non-buffered
Part Numbers
SM53202800UFUGU
SM53202801UFUGU
SM53202808UFUGU
SM53202809UFUGU
:
:
:
:
Standard
:
JEDEC
Configuration
:
Non-ECC
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
2K/4K
Device Physicals
:
300mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
3.550" x 1.000"
No. of sides
:
Single-sided
Mating Connector (Examples)
Vertical
:
AMP-390070-6 (3.3V, Gold)
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320230UUF6GU
:
2Mx32,
1Mx16 based.
Functional Diagram
CAS1#
CAS0#
RAS0#
WE#
OE#
2Mx8
DRAM
2Mx8
DRAM
2Mx8
DRAM
2Mx8
DRAM
CAS2#
CAS3#
RAS2#
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ0~DQ31
SA0~SA2
SCL
A0~A2 SDA
SCL
SERIAL PD
EEPROM
Notes : 1. A0~A10/A11 are connected to all DRAMs.
(A11 is NC for 2K refresh module).
2. Data is terminated using 10
series resistor.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
SDA
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
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