BL2N60D datasheet, PDF - EEWORLD Datasheet

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BL2N60D: DescriptionPower MOSFET; Channel Polarity: N-Channel; V(BR)DSS Min (V): 600V; ID Max (A): 2A; RDS(ON) Max (Ω): 5 Ohm; ID (A): 1A; VGS (V): 10V; VGS Max (V): 4V; ID (mA): 250mA; GFS Min (S): 2.25 S; VDS (V): 50V; ID (A) 1: 1A; Package: TO-252; CategoryDiscrete semiconductor The transistor; File Size455KB，7 Pages; ManufacturerGalaxy Microelectronics

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BL2N60D Overview

Power MOSFET; Channel Polarity: N-Channel; V(BR)DSS Min (V): 600V; ID Max (A): 2A; RDS(ON) Max (Ω): 5 Ohm; ID (A): 1A; VGS (V): 10V; VGS Max (V): 4V; ID (mA): 250mA; GFS Min (S): 2.25 S; VDS (V): 50V; ID (A) 1: 1A; Package: TO-252

BL2N60D Parametric

Parameter Name	Attribute value
Objectid	8327673831
Parts packaging code	TO-252
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99

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