BL
GALAXY ELECTRICAL
SIDAC
KS --- SERIES
V
BO
: 95 - 280 Volts
General Description
◇
A sidac is a silicon bilateral voltage triggered switch,
with greater power-handling capabilities than
standard diacs. Upon application of a voltage
exceeding the Sidac breakover voltage point, the Sidac
switches on, through a negative resistance region, to a
a low on-state voltage. Conduction will continue until
the current is interrupted or drops below the minimum
holding current of the device.
◇
Switching voltages in the range of 95 V to 330 V.
◇
Sidacs feature glass-passivated junctions that ensure
long term reliability and stable characteristics by
creating a rugged, reliable barrier against junction
contamination.
◇
Variations of devices covered in this data sheet are
available for custom design applications. Please
consult the factory for more information.
SMB
0.086(2.20)
0.077(1.95)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.008(0.203)MAX
0.060(1.52)
0.030(0.76)
0.220(5.59)
0.205(5.21)
Dimensions are in inches and (millimeters)
I
T(RMS)
V
DRM
(7) (8)
Type
A
MAX
K1050S
K1100S
K1200S
K1300S
K1400S
K1500S
K2000S
K2200S
K2400S
K2500S
1
1
1
1
1
1
1
1
1
1
V
BO
(1)
I
DRM
I
BO
I
H
(3) (4)
V
TM
I
TSM
(5)
R
S
(9)
dv/dt
di/dt
V
MIN
±90
±90
±90
±90
±90
±90
±180
±180
±190
±200
MIN
95
104
110
120
130
140
190
205
220
240
V
MAX
113
118
125
138
146
170
215
230
250
280
µA
MAX
5
5
5
5
5
5
5
5
5
5
µA
MAX
10
10
10
10
10
10
10
10
10
10
mA
TYP
60
60
60
60
60
60
60
60
60
60
MAX
150
150
150
150
150
150
150
150
150
150
V
Max
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
A
k
Ω
V/µSec A/µSec
MIN
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
TYP
150
150
150
150
150
150
150
150
150
150
60Hz 50Hz
MIN
20
20
20
20
20
20
20
20
20
20
16.7
16.7
16.7
16.7
16.7
16.7
16.7
16.7
16.7
16.7
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
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Document Number 0290002
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
V-I CHARACTERISTICS
KS --- SERIES
FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT
FFFFFFFF
DURATION
+I
I
T
Peak Surge (NonRepetitive)
On-State Current [I
TSM
] - Amps
I
H
I
S
-V
I
DRM
I
BO
R
S
100
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: I
T
R
MS
Maximum Rated
Value at Specified Junction Temperature
40
20
10
8.0
6.0
4.0
2.0
1.0
BLOCKING CAPABILITY MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
+V
V
S
V
DRM
V
BO
V
T
R
S
(V
BO
-V
S
)
(I
S
-I
BO
)
1.0
10
100
1000
Surge Current Duration - Full Cycles
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated V
DRM
; T
J
≤
100°C
I
BO
— Breakover current 50/60 Hz sine w ave
I
DRM
— Repetitive peak off-state current 50/60 Hz sine w ave; V = V
DRM
I
H
— Dynamic holding current 50/60 Hz sine w ave; R = 100
Ω
I
T(RMS)
— On-state RMS current T
J
≤
125°C 50/60 Hz sine w ave
I
TSM
— Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive)
R
S
— Sw itching resistance
R
S
=
(V
BO
-V
S
)
(I
S
-I
BO
)
50/60 Hz sine w ave
Electrical Specification Notes
(1) See Figure 9.5 for V
BO
change vs junction temperature.
(2) See Figure 9.6 for IBO vs junction temperature.
(3) See Figure 9.2 for I
H
vs case temperature.
(4) See Figure 9.13 for test circuit.
(5) See Figure 9.1 for more than one full cycle rating.
(6) R
θJA
Type 41 is 70° C/W.
(7) T
L
≤
100°C
(8) See Figure 9.14 for clarification of Sidac operation.
(9) For best Sidac operation, the load impedance should be near or
less than sw itching resistance.
V
BO
— Breakover voltage 50/60 Hz sine w ave
V
DRM
— Repetitive peak off-state voltage
V
TM
— Peak on-state voltage, I
T
= 1 Amp
General Notes
◇
All measurements are made at 60Hz w ith a resistive load at an
ambient temperature of +25°C unless otherw ise specified.
◇
Storage temperature range (T
S
) is -65°C to +150°C.
◇
The case (T
C
) or lead (T
L
) temperature is measured as show n on
the dimensional outline draw ings. See “Package Dimensions” section
of this catalog.
◇
Junction temperature range (T
J
) is -40°C to +125°C.
◇
Lead solder temperature is a maximum of +230°C for 10 seconds
maximum;
≥
1/16" (1.59mm) from case.
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Document Number 0290002
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GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.2 -- NORMALIZED DC HOLDING CURRENT vs
FFFFFFFFFFF
CASE/LEAD TEMPERATURE
KS -- SERIES
FIG.3-- REPETITIVE PEAK ON-STATE CURRENT (I
TRM
)
GGGGvs
PULSE WIDTH at VARIOUS FREQUENCIES
Repetitive Peak On-State Current (I
TRM
) - Amps
di/dt Limit Line
No
n-
R
I
TRM
V
BO
Firing
Current
Waveform
2.0
600
400
200
100
80
60
40
20
10
8
6
4
2
1
0.8
0.6
I
H
I
H
(T
C
=25° C)
1.5
ep
ea
Re
te d
pe
titi
f=10
on
kHz
Fr
eq
f=10
ue
0 kH
nc
z
y
f=1 k
Hz
to
l/f
f=5
1.0
Hz
T
J
=125o C Max
Ratio of
.5
kH
z
f=1
0k
Hz
f=20
kHz
f=5
0
-40
-15
+25
+65
+105 +125
4
2 x 10-3
68
2
1 x 10-2
4
68
2
1 x 10-1
4
6 81
Case Temperature (T
C
) - ° C
Pulse base width (t
o
) - mSec.
FIG.4 -- MAXIMUM ALLOWABLE AMBIENT
FFFFFFFFFF FFTEMPERATURE
vs ON-STATE CURRENT
FIG.5 -- NORMALIZED V
BO
CHANGE vs JUNCTION
JJJJJJJJJJJ
TEMPERATURE
Maximum Allowable Ambient Temperature (T
A
) - ° C
140
+4
Percentage of V
BO
Change - %
120
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
+2
0
-2
-4
-6
-8
-10
-12
-40
-20
0
100
80
DO
-15
x
60
40
26
20
0
0.2
0.4
0.6
0.8
1.0
+25
+20
+40
+60
+80
+100
+120
+140
RMS On-State Current [I
T(RMS)
] - Amps
Junction Temperature (T
J
) - ° C
FIG.6 -- NORMALIZED REPETITIVE PEAK BREAKOVER
CURRENT vs JUNCTION TEMPERATURE
FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE
GGGGGGG(TYPICAL)
9
Repetitive Peak Breakover
Current (I
BO
) Multiplier
9
8
7
6
5
4
3
2
Positive or Negative Instantaneous
On-State Current (i
T
) - Amps
T
L
=25° C
8
7
6
5
4
3
2
1
0
0
Kxx01G
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
V=V
BO
1
20
30
40
50
60 70 80 90 100 110120 130
Junction Temperature (T
J
) - ° C
Positive or Negative Instantaneous On-State Voltage (V
T
) - Volts
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Document Number 0290002
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GALAXY ELECTRICAL
3.
RATINGS AND CHARACTERISTIC CURVES
FIG.8 -- POWER DISSIPATION (TYPICAL) vs ON-STATE
MMMMMMMM
CURRENT
KS --- SERIES
FIG.9 -- COMPARISON OF SIDAC vs SCR
Average On-State Power Dissipation
[P
D(AV)
] - Watts
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 9.15
SCR
SIDAC
Kxx01G
100-250
VAC
60 Hz
100-250
VAC
60 Hz
0.2
0.4
0.6
0.8
1.0
RMS On-State Current [I
T(RMS)
] - Amps
FIG.10 -- LGNITOR CIRCUIT (LOW VOLTAGE INPUT)
FIG.11 -- TYPICAL HIGH PRESSURE SODIUM
LAMP FIRING CIRCUIT
BALLAST
BALLAST
4.7
μ
F
-
10
μ
F
-
+
50V
+
-
24 VAC
60 Hz
4.7
μ
F
100V
+
100V
4.7 k
Ω
K1200E
SIDAC
200V
SIDAC
3.3 k
Ω
0.47
μ
F
400V
LAMP
SIDAC
7.5 k
Ω
0.22
μ
F
LAMP
1/2W
1.2
μ
F
120 VAC
60 Hz
16 mH
220 VAC
60 Hz
H.V.
IGNITOR
120 VAC
220 VAC
FIG.12 -- XENON LAMP FLASHING CIRCUIT
FIG.13 -- DYNAMIC HOLDING CURRENT TEST
CIRCUIT FOR SIDACS
100
Ω
-
2W
10
μ
F
+
250V
+
-
10
μ
F
450V
XENON LAMP
PUSH
TO
TEST
S1
SWITCH TO TEST IN
EACH DIRECTION
K2200S
4KV
20M
Ω
120VAC
60Hz
SIDAC .01
μ
F
400V
200-
400V
TRIGGER
TRANSFORMER
20:1
I
PK
100-250
VAC
60 Hz
100
Ω
1%
DEVICE
UNDER
TEST
TRACE STOPS
I
H
SCOPE INDICATIONS
S1
SCOPE
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Document Number 0290002
BL
GALAXY ELECTRICAL
4.
RATINGS AND CHARACTERISTIC CURVES
FIG.14 -- BASIC SIDAC CIRCUIT
KS --- SERIES
V
BO
V
BO
V
BO
100-250
VAC
60Hz
I
H
LOAD
I
H
I
H
LOAD CURRENT
120-145
°
CONDUCTION
ANGLE
FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC
(a) Circuit
V
BO
R
SIDAC
Vc
V
C
(b) Waveforms
VDC(IN)
≥
VBO
t
C
I
L
R
L
I
L
t
R
max
≤
R
min
≥
V
IN
-V
BO
I
BO
V
IN
-V
TM
I
H(MIN)
FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYPICAL TRANSISTOR INDUCTIVE
VVVVVVVVVVVVVVVVVLOAD
SWITCHING REQUIREMENTS
V
CE
MONITOR
INPUT
VOLTAGE
0V
tw
≈
3 ms
(See Note A)
t
w
(See Note B)
5V
INPUT
2N6127
(or equivalent)
R
BB1
=150
Ω
TIP-47
100mH
COLLECTOR
CURRENT
0.63 A
0
+
V
CC
=20V
-
V
BB1
=10V
+
-
V
CE(sat)
V
BB2
=0
R
S
=0.1
Ω
10 V
I
C
MONITOR
COLLECTOR
CURRENT
SIDAC V
BO
100 mS
50
Ω
R
BB2
=100
Ω
50
Ω
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until I
CM
= 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that V
BO
is just below V
CEO
rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
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Document Number 0290002
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GALAXY ELECTRICAL
5.
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