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2N5157

Description
bipolar npn device in a hermetically sealed to3 metal package
File Size37KB,3 Pages
ManufacturerAll Sensors
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2N5157 Overview

bipolar npn device in a hermetically sealed to3 metal package

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5157
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・Switching
regulator
・Inverters
・Solenoid
and relay drivers
・Motor
controls
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
MAXIMUN RATINGS(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
700
500
7
3.5
100
165
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
JMnic
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