2SJ217
Silicon P Channel MOS FET
REJ03G0850-0200
(Previous: NON-084)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ217
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
–60
±20
–45
–180
–45
150
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Pch
Tch
Note 2
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
3. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–60
±20
—
—
–1.0
—
—
16
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.033
0.045
25
3800
2000
490
30
235
670
450
–1.35
300
Max
—
—
±10
–250
–2.0
0.042
0.06
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –20 A, V
GS
= –10 V
Note 3
I
D
= –20 A, V
GS
= –4 V
I
D
= –20 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –20 A
V
GS
= –10 V
R
L
= 1.5
Ω
I
F
= –45 A, V
GS
= 0
I
F
= –45 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 3
Note 3
Rev.2.00 Sep 07, 2005 page 2 of 6
2SJ217
Main Characteristics
Power vs. Temperature Derating
200
–200
10
Maximum Safe Operation Area
Pch (W)
–100
µ
s
10
I
D
(A)
0
150
–50
C
D
PW
pe
O
µ
s
=
1
Channel Dissipation
10
Drain Current
100
–20
–10
–5
Ta = 25°C
m
s
m
(1
s
50
Operation in
this area is
limited by R
DS (on)
t
ra
n
io
c
(T
=
sh
ot
)
)
°C
25
0
0
50
100
150
200
–2
–1
–2
–5
–10 –20
–50 –100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
–100
–10 V
–6 V
Pulse Test
Typical Foward Transfer Characteristics
–50
V
DS
= –10 V
Pulse Test
I
D
(A)
–80
I
D
(A)
–5 V
–40
25°C
Tc = –25°C
–30
75°C
–60
Drain Current
Drain Current
–20
–4 V
–40
–3 V
–20
V
GS
= –2 V
0
–4
–8
–12
–16
–20
–10
0
0
0
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.5
Pulse Test
–2.0
–50 A
–1.5
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
Pulse Test
0.2
0.1
0.05
V
GS
= –4 V
–1.0
–20 A
I
D
= –10 A
0.02
0.01
0.005
–2
–10 V
–0.5
0
0
–2
–4
–6
–8
–10
–5
–10
–20
–50 –100 –200
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SJ217
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (nS)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.1
Pulse Test
200
100
50
Tc = –25°C
25°C
20
10
5
V
DS
= –10 V
Pulse Test
2
–0.5 –1
–2
–5
–10
–20
–50
75°C
0.08
I
D
= –20 A
0.06
–10 A
V
GS
= –4 V
0.04
–10 V
I
D
= –50 A
–10 A, –20 A
0.02
0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Ciss
Body-Drain Diode Reverse
Recovery Time
5000
Reverse Recovery Time trr (ns)
di / dt = 50 A /
µs,
V
GS
= 0
Ta = 25°C, Pulse Test
Capacitance C (pF)
2000
1000
500
2000
Coss
1000
500
Crss
200
100
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
200
100
50
–0.5
–1
–2
–5
–10 –20
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
–20
–4
Switching Time t (ns)
V
DD
= –10 V
–25 V
–50 V
V
GS
(V)
0
0
1000
500
td(off)
tf
200
100
50
20
tr
Drain to Source Voltage
–40
V
DS
V
DD
= –10 V
–25 V
–50 V
V
GS
–8
–60
–12
Gate to Source Voltage
td(on)
V
GS
= –10 V, V
DD
= –30 V
PW = 2
µs,
duty
≤
1 %
–1
–2
–5
–10
–20
–50
–80
I
D
= –45 A
–100
0
40
80
120
160
–16
–20
200
10
–0.5
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SJ217
Reverse Drain Current vs.
Source to Drain Voltage
–100
Reverse Drain Current I
DR
(A)
Pulse Test
–80
–60
–
10 V
–
5 V
–20
V
GS
= 0, 5 V
–40
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
Source to Drain Voltage
V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 0.83°C/W, Tc = 25°C
P
DM
uls
e
D=
PW
T
0.03
PW
T
0.0
1
1
sh
p
ot
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin
Vin Monitor
D.U.T.
R
L
Vout
Monitor
10%
Waveform
90%
90%
90%
Vin
–10 V
50
Ω
V
DD
= –30 V
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
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