DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV2100
Fast soft-recovery
controlled avalanche rectifier
Product specification
1996 Oct 07
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
BYV2100
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
MAX.
100
100
2.0
V
V
A
UNIT
T
tp
= 80
°C;
lead length = 10 mm;
averaged over any 20 ms period;
see Fig.2; see also Fig.4
T
amb
= 60
°C;
PCB mounting
(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4
−
−
1.3
A
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
T
tp
= 80
°C;
see Fig.6
T
amb
= 60
°C;
see Fig.7
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
−
−
−
18
12
50
A
A
A
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
20
+175
+175
mJ
°C
°C
1996 Oct 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
reverse current
CONDITIONS
I
F
= 2 A; T
j
= T
j max
; see Fig.5
I
F
= 2 A; see Fig.5
I
R
= 0.1 mA
V
R
= V
RRMmax
;
see Fig.8
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.8
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.10
f = 1 MHz; V
R
= 0 V; see Fig.9
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
−1
A/µs; see Fig.11
MIN.
−
−
120
−
−
−
TYP.
−
−
−
−
−
−
BYV2100
MAX.
0.78
0.98
−
5
150
12.5
V
V
V
UNIT
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse
recovery current
−
−
135
−
−
2
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.12.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 Oct 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
GRAPHICAL DATA
MGD737
BYV2100
handbook, halfpage
3
handbook, halfpage
2.0
MGD738
IF(AV)
(A)
2
IF(AV)
(A)
1.6
1.2
0.8
1
0.4
0
0
100
Ttp (°C)
200
0
0
100
Tamb (°C)
200
Switched mode application.
a = 1.42;
δ
= 0.5; V
R
= V
RRMmax
.
Switched mode application.
a = 1.42;
δ
= 0.5; V
R
= V
RRMmax
.
Device mounted as shown in Fig.12.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
3
MGD739
handbook, halfpage
6
MGD740
P
(W)
a = 3 2.5 2
1.57
1.42
IF
(A)
2
4
1
2
0
0
1
2
IF(AV) (A)
3
0
0
1
VF (V)
2
a = I
F(RMS)
/I
F(AV)
;
δ
= 0.5; V
R
= V
RRMmax
.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Dotted line: T
j
= 175
°C.
Solid line: T
j
= 25
°C.
Fig.5
Maximum forward voltage as a function of
forward current.
1996 Oct 07
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
BYV2100
handbook, full pagewidth
20
MGD741
IFRM
(A)
16
δ
= 0.05
12
0.1
8
0.2
4
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 80
°C;
R
th j-tp
= 46 K/W; V
R
= V
RRMmax
during 1
− δ.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
16
MGD742
IFRM
(A)
12
δ
= 0.05
8
0.1
0.2
4
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 100 K/W; V
R
= V
RRMmax
during 1
− δ.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Oct 07
5
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