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AOD454YL

Description
N-channel enhancement mode field effect transistor
File Size119KB,5 Pages
ManufacturerAll Sensors
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AOD454YL Overview

N-channel enhancement mode field effect transistor

AOD454Y
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD454Y uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in PWM, load switching
and general purpose applications.
Standard product
AOD454Y is Pb free, inside and out. It uses Pb-free die
attach and plating material(meets ROHS & Sony 259
specifications). AOD454YL is a Green Product ordering
option. AOD454Y and AOD454YL are electrically
identical.
TO-252
D-PAK
Features
V
DS
(V) = 40V
I
D
= 12 A (V
GS
= 10V)
R
DS(ON)
< 33 mΩ (V
GS
= 10V)
R
DS(ON)
< 47 mΩ (V
GS
= 4.5V)
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
40
±20
12
12
30
12
20
20
10
2
1.3
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17.4
50
4
Max
30
60
7.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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