Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Very small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
halfpage
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
PINNING
1PS70SB..
PIN
10
1
2
3
a
1
n.c.
k
1
14
a
1
k
2
k
1
, a
2
15
a
1
a
2
k
1
, k
2
16
k
1
k
2
a
1
, a
2
Fig.3
3
MLC358
3
1
2
1PS70SB14 diode
configuration (symbol).
3
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
TYPE NUMBER
1PS70SB10
1PS70SB14
1PS70SB15
1PS70SB16
Note
1.
∗
= -: Made in Hong Kong.
∗
= t: Made in Malaysia.
MARKING
CODE
(1)
7∗0
7∗4
7∗5
7∗6
1
Top view
2
1
2
MLC359
MGD765
Fig.1
Simplified outline
SOT323 (SC-70) and
pin configuration.
Fig.4
1PS70SB15 diode
configuration (symbol).
3
1
2
n.c.
MLC357
3
1
2
MLC360
Fig.2
1PS70SB10 single
diode configuration
(symbol).
Fig.5
1PS70SB16 diode
configuration (symbol).
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
T
amb
< 25
°C
PARAMETER
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
CONDITIONS
−
−
−
−
−
MIN.
MAX.
UNIT
30
200
300
600
200
+150
125
+125
V
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
continuous forward voltage
see Fig.6
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 (SC70) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
625
UNIT
K/W
continuous reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.7
V
R
= 1 V; f = 1 MHz; see Fig.8
240
320
400
500
800
2
10
mV
mV
mV
mV
mV
µA
pF
PARAMETER
CONDITIONS
MAX.
UNIT
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
GRAPHICAL DATA
MSA892
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
3
IR
(µA)
10
2
(2)
(1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10
1
10
1
0
0.4
0.8
VF (V)
1.2
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
15
Cd
(pF)
10
MSA891
5
0
0
10
20
V R (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 26
5
51mcu
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