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NAND16GW3C4AN6E

Description
Flash, 2GX8, 20ns, PDSO48,
Categorystorage    storage   
File Size1MB,58 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

NAND16GW3C4AN6E Overview

Flash, 2GX8, 20ns, PDSO48,

NAND16GW3C4AN6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid110478008
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time20 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
memory density17179869184 bit
Memory IC TypeFLASH
memory width8
Number of departments/size8K
Number of terminals48
word count2147483648 words
character code2000000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2GX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size2K words
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
ready/busyYES
Department size256K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitNO
typeMLC NAND TYPE
NAND08GW3C2A
NAND16GW3C4A
8/16 Gbit, 2112 byte page,
3 V supply, multilevel, multiplane, NAND Flash memory
Features
High density multilevel cell (MLC) Flash
memory
– Up to 16 Gbit memory array
– Up to 512 Mbit spare area
– Cost-effective solutions for mass storage
applications
NAND interface
– x 8 bus width
– Multiplexed address/data
Supply voltage: V
DD
= 2.7 to 3.6 V
Page size: (2048 + 64 spare) bytes
Block size: (256K + 8K spare) bytes
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 60 µs (max)
– Sequential access: 25 ns (min)
– Page program operation time: 800 µs (typ)
Multipage program time (2 pages): 800 µs (typ)
Fast block erase
– Block erase time: 2.5 ms (typ)
Multiblock erase time (2 blocks): 2.5 ms (typ)
Status register
Electronic signature
Serial number option
Chip enable ‘don’t care’
TSOP48 12 x 20 mm (N)
LGA52 12 x 17 mm (N)
Data protection
– Hardware program/erase locked during
power transitions
Development tools
– Error correction code models
– Bad block management and wear leveling
algorithm
– HW simulation models
Data integrity
– 10,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages available
January 2008
Rev 2
1/58
www.numonyx.com
1

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