AO6401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO6401 is Pb-free
(meets ROHS & Sony 259 specifications). AO6401L
is a Green Product ordering option. AO6401 and
AO6401L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 49mΩ (V
GS
= -10V)
R
DS(ON)
< 64mΩ (V
GS
= -4.5V)
R
DS(ON)
< 119mΩ (V
GS
= -2.5V)
D
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
47.5
74
37
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6401
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-5A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-4.5V, I
D
=-4A
7
53
81
11
-0.75
-0.7
-25
42
49
74
64
119
-1
-3
943
108
73
6
9.5
2.1
2.9
6
3
40
11
21.2
12.8
-1
Min
-30
-1
-5
±100
-1.3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
V
GS
=-2.5V, I
D
=-1A
Forward Transconductance
V
DS
=-5V, I
D
=-5A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
V
GS
=-10V, V
DS
=-15V, R
L
=3Ω,
R
GEN
=6Ω
I
F
=-5A, dI/dt=100A/µs
I
F
=-5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
-4.5V
-3V
-I
D
(A)
15
-I
D
(A)
-2.5V
10
V
GS
=-2V
6
125°C
4
25°C
5
2
10
V
DS
=-5V
8
0
0
1
2
3
4
-V
DS
(Volts)
Fig 1: On-Region Characteristics
5
0
0
0.5
1.5
2
2.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
=-5A
V
GS
=-4.5V
V
GS
=-10V
1
3
120
100
R
DS(ON)
(m
Ω
)
80
60
40
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
130
R
DS(ON)
(m
Ω
)
110
90
70
50
30
10
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=-2A
V
GS
=-2.5V
1.6
Normalized On-Resistance
1.4
1.2
V
GS
=-4.5V
V
GS
=-2.5V
I
D
=-2A
1
V
GS
=-10V
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
Alpha & Omega Semiconductor, Ltd.
AO6401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
V
DS
=-15V
I
D
=-5A
Capacitance (pF)
1200
1000
800
600
400
200
0
0
6
8
10
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
rss
C
iss
4
-V
GS
(Volts)
3
2
1
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
40
10µs
100µs
1ms
0.1s
10ms
30
Power (W)
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
20
1.0
1s
10s
DC
0.1
0.1
1
10
100
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
Embedded System
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