N-CHANNEL
POWER MOSFET
IRF330 / 2N6760
•
•
•
•
Power MOSFET Transistor
In A Hermetic Metal TO-3 Package
High Input Impedance / RDS(on) < 1.0
Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
VGS
ID
ID
IDM
PD
EAS
IAR
dv/dt
TJ
Tstg
TL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
(1)
Total Power Dissipation at
Tc = 25°C
Tc = 100°C
Tc = 25°C
Derate Above 25°C
Single Pulse Avalanche Energy
(2)
Avalanche Current
(1)
(3)
Peak Diode Recovery
Junction Temperature Range
Storage Temperature Range
Lead Temperature
(1.6mm (0.063”) from case for 10sec)
400V
±20V
5.5A
3.5A
22A
75W
0.6W/°C
1.7mJ
5.5A
4V/ns
-55 to +150°C
-55 to +150°C
300°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.67
Units
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols
LS + LD
Parameters
Total Inductance
Typ.
6.1
Units
nH
Notes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, Peak IL = 5.5A, Starting TJ = 25°C
(3)
(4)
@ ISD
≤
5.5A, di/dt
≤
90A/µs, VDD
≤
BVDSS, TJ
≤
150°C, Suggested RG = 7.5Ω
Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9142
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
N-CHANNEL
POWER MOSET
IRF330 / 2N6760
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
BVDSS
∆
BVDSS
∆
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Parameters
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
Static Drain-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage
Drain Current
Forward Gate-Source
Leakage
Reverse Gate-Source
Leakage
Test Conditions
VGS = 0
Reference
to 25°C
VGS = 10V
VGS = 10V
VDS = VGS
VDS
≥
15V
VGS = 0
Min.
400
Typ.
Max.
Units
V
ID = 1.0mA
ID = 1.0mA
ID = 3.5A
ID = 5.5A
(4)
0.46
1.0
1.22
2
(4)
V/°C
(4)
Ω
V
S(
Ʊ
)
ID = 250µA
I DS = 3.5A
4
2.9
25
250
100
VDS = 0.8BVDSS
TJ = 125°C
µA
VGS = 20V
VGS = -20V
nA
-100
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1.0MHz
VGS = 10V
ID = 5.5A
VDS = 0.5BVDSS
VDD = 200V
ID = 5.5A
RG = 7.5
Ω
17
2
8
620
200
75
39
6
20
30
40
80
35
ns
nC
pF
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
ISM
VSD
trr
Qrr
Continuous Source Current
Pulse Source Current
(1)
5.5
22
IS = 5.5A
VGS = 0
(4)
A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TJ = 25°C
1.4
700
(4)
V
ns
IF = 5.5A
VDD
≤
50V
TJ = 25°C
di/dt = 100A/µs
6.2
µC
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9142
Issue 1
Page 2 of 3
N-CHANNEL
POWER MOSET
IRF330 / 2N6760
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA)
Pin 1 - Gate
Pin 2 - Source
Case - Drain
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9142
Issue 1
Page 3 of 3
22.23
(0.875)
max.
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