BT150S-600R datasheet, PDF - EEWORLD Datasheet

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BT150S-600R: Descriptionthyristors logic level; CategoryAnalog mixed-signal IC Trigger device; File Size50KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BT150S-600R Overview

thyristors logic level

BT150S-600R Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	_compli
Other features	SENSITIVE GATE
Shell connection	ANODE
Nominal circuit commutation break time	100 µs
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	6 mA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Maximum leakage current	0.5 mA
Humidity sensitivity level	1
On-state non-repetitive peak current	35 A
Number of components	1
Number of terminals	2
Maximum on-state current	2500 A
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	4 A
Maximum repetitive peak off-state leakage current	500 µA
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Philips Semiconductors

Product specification

Thyristors

logic level

GENERAL DESCRIPTION

Glass passivated, sensitive gate

thyristors in a plastic envelope,

suitable for surface mounting,

intended for use in general purpose

switching

and

phase

control

applications. These devices are

intended to be interfaced directly to

microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

BT150S series

BT150M series

QUICK REFERENCE DATA

SYMBOL

DRM

RRM

T(AV)

T(RMS)

TSM

PARAMETER

BT150S

(or BT150M)-

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

MAX. MAX. MAX. UNIT

500R

500

2.5

600R

600

2.5

800R

800

2.5

PINNING - SOT428

Standard Alternative

NUMBER

tab

cathode

anode

gate

anode

gate

anode

cathode

anode

PIN CONFIGURATION

tab

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

half sine wave; T

≤

111 ˚C

all conduction angles

half sine wave; T

= 25 ˚C prior to

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

= 10 A; I

= 50 mA;

/dt = 50 mA/µs

-40

MAX.

-500R -600R -800R

500

600

800

2.5

6.1

0.5

150

125

UNIT

A/µs

˚C

DRM

, V

RRM

Repetitive peak off-state

voltages

T(AV)

T(RMS)

TSM

Average on-state current

RMS on-state current

Non-repetitive peak

on-state current

/dt

RGM

G(AV)

stg

t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

over any 20 ms period

Storage temperature

Operating junction

temperature

Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 1997

Rev 1.100

BT150S-600R Related Products

	BT150S-600R	BT150S-800R	BT150S-500R	BT150M-600R	BT150M-800R	BT150S	BT150M
Description	thyristors logic level	thyristors logic level	thyristors logic level	thyristors logic level	thyristors logic level	thyristors logic level	thyristors logic level
Maker	NXP	NXP	NXP	NXP	NXP	-	-
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	-	-
Contacts	3	3	3	3	3	-	-
Reach Compliance Code	_compli	compli	compli	compli	compli	-	-
Other features	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE	-	-
Shell connection	ANODE	ANODE	ANODE	ANODE	ANODE	-	-
Nominal circuit commutation break time	100 µs	100 µs	100 µs	100 µs	100 µs	-	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-
Maximum DC gate trigger current	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA	-	-
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-	-
Maximum holding current	6 mA	6 mA	6 mA	6 mA	6 mA	-	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	-	-
Maximum leakage current	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	-	-
On-state non-repetitive peak current	35 A	35 A	35 A	35 A	35 A	-	-
Number of components	1	1	1	1	1	-	-
Number of terminals	2	2	2	2	2	-	-
Maximum on-state current	2500 A	2500 A	2500 A	2500 A	2500 A	-	-
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
Maximum rms on-state current	4 A	4 A	4 A	4 A	4 A	-	-
Maximum repetitive peak off-state leakage current	500 µA	500 µA	500 µA	500 µA	500 µA	-	-
Off-state repetitive peak voltage	600 V	800 V	500 V	600 V	800 V	-	-
Repeated peak reverse voltage	600 V	800 V	500 V	600 V	800 V	-	-
surface mount	YES	YES	YES	YES	YES	-	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-
Trigger device type	SCR	SCR	SCR	SCR	SCR	-	-

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