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W25X10VSNI

Description
1M-bit, 2M-bit, 4M-bit and 8M-bit serial flash memory with 4kb sectors and dual output spi
Categorystorage    storage   
File Size1MB,48 Pages
ManufacturerWinbond Electronics Corporation
Websitehttp://www.winbond.com.tw
Download Datasheet Parametric View All

W25X10VSNI Overview

1M-bit, 2M-bit, 4M-bit and 8M-bit serial flash memory with 4kb sectors and dual output spi

W25X10VSNI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerWinbond Electronics Corporation
Parts packaging codeSOIC
package instruction0.150 INCH, PLASTIC, SOIC-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresSYNCHRONOUS MODE ALSO POSSIBLE
Maximum clock frequency (fCLK)33 MHz
Data retention time - minimum20
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee0
length4.85 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)240
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.72 mm
Serial bus typeSPI
Maximum standby current0.00001 A
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeNOR TYPE
width3.9 mm
write protectHARDWARE/SOFTWARE
W25X10, W25X20, W25X40, W25X80
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT
SERIAL FLASH MEMORY WITH
4KB SECTORS AND DUAL OUTPUT SPI
-1-
Publication Release Date: June 21, 2007
Revision L
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