BD135T / BD137T / BD139T
NPN SILICON EPITAXIAL POWER
TRANSISTOR
These devices are designed as Audio Amplifier
and Drivers Utilizing.
E
C
B
•
TO-126 Plastic Package
Absolute Maximum Ratings (T
a
=25
O
C)
Parameter
Collector Emitter Voltage
Collector Emitter Voltage ( R
BE
= 1 KΩ)
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
1)
Collector Current - Peak
Base Current - Continuous
Total Power Dissipation @ T
A
=25
O
C
Derate above 25
O
C
Total Power Dissipation @ T
C
=25
O
C
Derate above 25
O
C
Total Power Dissipation @ T
C
=70
O
C
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
P
D
P
D
T
J
, T
s
R
θ
JA
R
θ
JC
Value
BD135T BD137T BD139T
45
45
45
60
60
60
5
1.5
2
0.5
1.25
10
12.5
100
8
-55 to +150
100
10
O
Unit
V
V
V
V
A
A
W
mW/
O
C
W
mW/
O
C
W
O
80
100
100
C
C/W
C/W
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/03/2006
BD135T / BD137T / BD139T
Characteristics at T
a
=25
O
C
Parameter
DC Current Gain
at V
CE
= 2 V, I
C
= 5 mA
at V
CE
= 2 V, I
C
= 500 mA
at V
CE
= 2 V, I
C
= 150 mA
-6
-10
-16
-25
Collector Emitter Sustaining Voltage
at I
C
= 30 mA
at I
C
=10mA
Collector Cutoff Current
at V
CB
= 30 V
Emitter Cutoff Current
at V
EB
= 5 V
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
Base Emitter On Voltage
at I
C
= 500 mA, V
CE
= 2 V
BD135T
BD137T
BD139T
V
CEO(sus)
V
CEO(sus)
V
CEO(sus)
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
45
60
80
-
-
-
-
-
-
-
0.1
10
0.5
1
V
V
V
µA
µA
V
V
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
25
25
40
63
100
160
-
-
100
160
250
400
-
-
-
-
-
-
Symbol
Min.
Max.
Unit
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 22/03/2006
stm32/stm8
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