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TC58FVB004FT-12

Description
4M (512k x 8) bit cmos flash memory
Categorystorage    storage   
File Size1MB,26 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC58FVB004FT-12 Overview

4M (512k x 8) bit cmos flash memory

TC58FVB004FT-12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeTSOP1
package instruction10 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-40
Contacts40
Reach Compliance Codeunknow
Maximum access time120 ns
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length18.4 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals40
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10 mm

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