GT20J301 datasheet, PDF - EEWORLD Datasheet

GT20J301: DescriptionN channel (high power switching, motor control applications); CategoryDiscrete semiconductor The transistor; File Size324KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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GT20J301 Overview

N channel (high power switching, motor control applications)

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH SPEED
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)	300 ns
Gate emitter threshold voltage maximum	8 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	130 W
Maximum power dissipation(Abs)	130 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	700 ns
Nominal on time (ton)	400 ns
VCEsat-Max	2.7 V

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