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1N4149CSM

Description
silicon epitaxial planar diode
File Size11KB,1 Pages
ManufacturerAll Sensors
Download Datasheet View All

1N4149CSM Overview

silicon epitaxial planar diode

LAB
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
2.54 ± 0.13
(0.10 ± 0.005)
SEME
1N4149CSM
SILICON EPITAXIAL
PLANAR DIODE
General Purpose and
Switching Diode in
A
1.40
(0.055)
max.
3
2
1
0.76 ± 0.15
(0.03 ± 0.006)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.31 rad.
(0.012)
1.02 ± 0.10
(0.04 ± 0.004)
Hermetic Ceramic Surface Mount
Package for
High Reliability Applications
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 — Anode
PAD 2 — Not Connected
PAD 3 — Cathode
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Parameter
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
P
tot
Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Power Dissipation at T
amb
= 25 °C
t = 1µs
t = 1s
Test Conditions
Min.
Typ.
Max.
100
100
150
200
450
2000
500
500
Unit
V
V
mA
mA
mA
mA
mW
CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
V
F
I
R
V
(BR)R
C
d
V
fr
t
rr
Forward Voltage
Reverse Current
Reverse Avalanche Breakdown
Voltage
Capacitance
Forward Recovery Voltage
Reverse Recovery Time
Test Conditions
I
F
= 10mA
V
R
= 20V
V
R
= 20V , T
j
= 150°C
I
R
= 100µA
I
R
= 5µA
V
R
= 0V , f = 1 MHz
I
F
= 50mA , t
r
= 20ns
I
F
= 10mA to I
R
= 60mA
R
L
= 100Ω
Min.
Typ.
Max.
1
25
50
Unit
V
nA
µA
V
V
100
100
4
2.5
4
pF
V
ns
10/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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