Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Passivated high voltage, high commutation
triac in a full pack, plastic envelope. This
triac is intended for use in motor control
circuits where high blocking voltage, high
static and dynamic dV/dt and high dI/dt can
occur. This device will commutate the full
rated rms current at the maximum rated
junction temperature, without the aid of a
snubber.
BTA208X-1000B
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
1000
8
65
UNIT
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
≤
73 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
MAX.
1000
8
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
71
21
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
August 2003
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
BTA208X-1000B
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.5
6.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
1
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
MIN.
2
2
2
-
-
-
-
-
-
0.25
-
TYP.
18
21
34
31
34
30
31
1.3
0.7
0.4
0.1
MAX.
50
50
50
60
90
60
60
1.65
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dI
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 ˚C; I
T(RMS)
= 8 A;
without snubber; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
MIN.
1000
15
-
TYP.
4000
38
2
MAX.
-
-
-
UNIT
V/µs
A/ms
µs
1
Device does not trigger in the T2-, G+ quadrant.
August 2003
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208X-1000B
12
10
Ptot / W
Ths(max) / C
71
= 180
120
1
10
IT(RMS) / A
BT137X
80
89
90
60
30
8
73 C
8
6
4
2
0
6
98
4
107
116
125
10
2
0
2
4
6
IT(RMS) / A
8
0
-50
0
50
Ths / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
IT(RMS) / A
1000
25
20
dI
T
/dt limit
100
15
10
IT
T
10
10us
I TSM
time
5
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
≤
73˚C.
VGT(Tj)
VGT(25 C)
80
70
60
50
40
30
1.6
1.4
1.2
1
0.8
Tj initial = 25 C max
20
10
0.6
0.4
-50
0
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
August 2003
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208X-1000B
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
25
IT / A
Tj = 125 C
Tj = 25 C
20
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
max
15
10
1
5
0.5
0
-50
0
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
unidirectional
bidirectional
3
2.5
1
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
0.1
P
D
tp
t
0
50
Tj / C
100
150
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
3
2.5
1000
dIcom/dt (A/ms)
typ
2
1.5
1
0.5
0
-50
100
min
10
1
0
50
Tj / C
100
150
20
40
60
80
100
140
120
Tj /
°C
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of change of commutating
current dI
com
/dt versus junction temperature.
August 2003
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
BTA208X-1000B
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
seating
plane
15.8
max
15.8
max.
3 max.
not tinned
19
max.
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2003
5
Rev 1.000
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