DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B351Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Interdigitated structure; high emitter efficiency
•
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
•
Gold metallization realizes very stable characteristics
and excellent lifetime
•
Multicell geometry gives good balance of dissipated
power and low thermal resistance
•
Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration and specified in class C.
3
2
Top view
olumns
MX0912B351Y
PINNING - SOT439A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
1
c
b
3
e
MAM045
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common base class C broadband amplifier.
MODE OF
OPERATION
Class C
t
p
= 10
µs; δ
= 10%
f
(GHz)
0.960 to 1.215
V
CC
(V)
50
P
L
(W)
>325
G
po
(dB)
>7
η
C
(%)
>40
Z
i
/Z
L
(Ω)
see Figs 7 and 8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
t
≤
10 s; note 1
open emitter
R
BE
= 0
Ω
open base
open collector
t
p
≤
10
µs; δ ≤
10%
T
mb
= 75
°C;
t
p
≤
10
µs; δ ≤
10%
CONDITIONS
MX0912B351Y
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
65
60
20
3
21
960
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook, halfpage
1000
Ptot
(W)
800
MGL054
600
400
200
0
−
50
0
100
Tmb (°C)
200
t
p
= 10
µs; δ
= 10%; P
tot max
= 960 W.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
T
j
= 125
°C
unless otherwise specified.
SYMBOL
R
th j-mb
R
th mb-h
Z
th j-h
Notes
1. See “Mounting
recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
V
CB
= 65 V; I
E
= 0
V
CB
= 50 V; I
E
= 0
V
CE
= 60 V; R
BE
= 0
Ω
V
EB
= 1.5 V; I
C
= 0
PARAMETER
thermal resistance from junction to mounting base CW
thermal resistance from mounting base to heatsink CW; note 1
thermal impedance from junction to heatsink
t
p
= 10
µs; δ
= 10%
notes 1 and 2
CONDITIONS
MX0912B351Y
MAX.
1.7
0.2
0.13
UNIT
K/W
K/W
K/W
MAX.
140
14
140
1.4
mA
mA
mA
mA
UNIT
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
measured in the test circuit as shown in Fig.6 and working in class C
broadband in pulse mode; note 1.
MODE OF OPERATION
Class C;
t
p
= 10
µs; δ
= 10%
t
p
= 300
µs; δ
= 10%;
see Fig.5
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
CC
during pulse.
f
(GHz)
0.960 to 1.215
1.03 to 1.09
V
CC
(V)
(2)
50
50
P
L
(W)
>325
typ. 375
typ. 350
G
po
(dB)
>7
typ. 7.6
typ. 8
η
C
(%)
>40
typ. 47
typ. 48
Z
i
/Z
L
(Ω)
see Figs 7 and 8
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B351Y
handbook, halfpage
450
MGL056
handbook, halfpage
50
MGL055
PL
(W)
η
C
(%)
400
45
350
0.95
1.05
1.15
f (GHz)
1.25
40
0.95
1.05
1.15
f (GHz)
1.25
V
CC
= 50 V; t
p
= 10
µs; δ
= 10%.
Fig.4
Fig.3
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.6)
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.6)
1997 Feb 19
5
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