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RJK2017DPE

Description
silicon N channel mos fet high speed power switching
File Size103KB,7 Pages
ManufacturerRenata SA
Websitehttp://www.renata.com/
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RJK2017DPE Overview

silicon N channel mos fet high speed power switching

RJK2017DPE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1589-0400
Rev.4.00
Dec 02, 2009
Features
Low on-resistance
R
DS(on)
= 0.036
Ω
typ. (at I
D
= 22.5 A, V
GS
= 10 V, Ta = 25
°C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
AR Note3
Pch
Note2
θch-c
Tch
Tstg
Ratings
200
±30
45
135
45
135
12
9.6
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1589-0400 Rev.4.00 Dec 02, 2009
Page 1 of 6

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Description silicon N channel mos fet high speed power switching silicon N channel mos fet high speed power switching

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