Si4300
Dual-Band Monolithic Power Amplifier System
Description
The Si4300 is a complete, monolithic, high-power, and
high-performance power amplifier system that integrates
all functions and all components between the transmit
portion of the transceiver and antenna switch module
(ASM). The integrated circuit consists of two amplification
paths which supports GSM 900 and DCS 1800. These
amplifiers are General Packet Radio Service (GPRS) class
12 compatible and can be used in GPRS multi-slot
applications. The Si4300 integrates the input and output
matching networks, complete power control, thermal and
load mismatch protection, and many other features and
functions in a single, standard CMOS die on a ceramic
substrate.
Features
-
Small 25 mm
2
package
(3.9 x 6.4 x 1.3 mm)
-
Complete power control
-
Thermal and load mismatch protection
-
Harmonic filtering
-
Input and output matching circuits
-
Optimal average burst current (ABC)
for all power levels
-
Low powerdown current during
receive and standby
-
GPRS Class 12 compatible
-
3.0 to 4.8 V operation
-
JEDEC moisture sensitivity level (MSL) 1
-
RoHS compliant
Applications
-
E-GSM 900 and DCS 1800 dual-band cellular
handsets
-
GPRS data terminals
V
BAT
APC
Low Pass
Filter
Power
Control
Si4300
RFIL
Limiter
PA
Matching
Network
Harmonic
Filter
RFOL
GND
Matching
Network
Limiter
PA
RFOH
Harmonic
Filter
RFIH
TLIMIT
PAEN
V
DD
SHUTD
BSEL
Monitor, Control,
and
I/O Interface
Temperature
and Voltage
Sensors
Power Amplifier
Copyright © 2005 by Silicon Laboratories
11.10.05
Si4300
Dual-Band Monolithic Power Amplifier System
Selected Electrical Specifications
Parameter
Input Power
Output Noise Power
Symbol
P
IN
Test Condition
GSM
Across all operating conditions
RBW = 100 kHz,
f = 925 to 935 MHz
RBW = 100 kHz, f
>
935 MHz, 6 dBm
P
OUT
= over all power levels,
All combinations of the following:
P
IN
= 3.5 to 11 dBm, APC < 2.0 V,
T
C
= –20 to 85 °C, V
BAT
= 3.0 to 4.8 V,
Antenna VSWR
≤
20:1, all angles
Post-PA loss
≥
1.4 dB
DCS
Across all operating conditions
RBW = 100 kHz,
f = 1805–1880 MHz
RBW = 100 kHz, f > 1880 MHz
P
OUT
= over all power levels,
All combinations of the following:
P
IN
= 3.5 to 9 dBm, APC < 2.0 V,
T
C
= –20 to 85 °C, V
BAT
= 3.0 to 4.8 V,
Antenna VSWR
≤
20:1, all angles
Post-PA loss
≥
1.4 dB
Min
3.5
—
—
—
—
Typ
—
—
–86
1.6:1
—
Max
11
–72
–84
1.8:1
no damage
or
permanent
degradation
Unit
dBm
dBm
dBm
Input VSWR
Ruggedness
Input Power
Output Noise Power
P
IN
P
NOISE
3.5
—
—
—
—
—
—
—
1.6:1
—
9
–77
–77
1.8:1
no damage
or
permanent
degradation
dBm
dBm
dBm
Input VSWR
Ruggedness
Pin Assignments
(Top View)
N/C
BSEL
RFIL
GND
RFIH
APC
N/C
1
E
A
Package Information
C
A
M
DETAIL A
0.10
M
C A B
NC
15
14
RFOH
B
(2X)
aaa C
C1
P1
S2
S1
C2
2
GND
16
V
BAT
V
BAT
13
PAEN
D
C1
P4
P2
P3
S3
S4
S5
3
17
4
5
12
11
18
10
TLIMIT
SHUTD
(2X)
DETAIL D (6X)
aaa C
0.10
M
DETAIL B (10X)
0.10
M
C A B
Bottom View
DETAIL C (3X)
0.10
M
V
DD
GND
C A B
C A B
Top View
Side View
6
GND
19
NC
20
9
H2
J2
h1
h2
K2
L2
H1
J1
K1
L1
7
8
RFOL
Dimension
A
H1
h1
H2
h2
J1
J2
K1
K2
MIN
1.17
0.55
0.35
0.35
0.15
0.27
0.35
0.35
0.35
NOM
1.30
0.60
0.40
0.40
0.20
0.32
0.40
0.40
0.40
DETAIL A
DETAIL B
DETAIL C
DETAIL D
MAX
1.43
0.65
0.45
0.45
0.25
0.37
0.45
0.45
0.45
Dimension MIN NOM MAX
L1
0.35 0.40 0.45
L2
1.65 1.70 1.75
C1
2.70 BSC
C2
2.60 BSC
D
6.40 BSC
E
3.90 BSC
M
2.90 BSC
P1
1.70 BSC
P2
0.50 BSC
Dimension MIN NOM MAX
P3
0.30 BSC
P4
1.60 BSC
S1
1.60 BSC
S2
0.80 BSC
S3
0.15 BSC
S4
0.50 BSC
S5
1.50 BSC
aaa
0.10
Power Amplifier
Copyright © 2005 by Silicon Laboratories
11.10.05
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders
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