SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
DESCRIPTION
·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·High voltage inverters
·Switching regulators
·Line operated amplifier
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2N6249
V
CBO
Collector-base voltage
2N6250
2N6251
2N6249
V
CEO
Collector-emitter voltage
2N6250
2N6251
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
300
375
450
200
275
350
6
10
30
10
175
200
-65~200
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6249
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6250
2N6251
2N6249
V
CE(sat)
Collector-emitter
saturation voltage
2N6250
2N6251
2N6249
V
BE(sat)
Base-emitter
saturation voltage
2N6250
2N6251
I
CEV
Collector cut-off
current
2N6249
I
CEO
Collector cut-off
current
2N6250
2N6251
I
EBO
Emitter cut-off current
2N6249
h
FE
DC current gain
2N6250
2N6251
f
T
I
s/b
Transition frequency
Second breakdown collector current
With base forward biased
I
C
=10A ; V
CE
=3V
I
C
=10A;I
B
=1.0A
I
C
=10A;I
B
=1.25 A
I
C
=10A;I
B
=1.67 A
I
C
=10A;I
B
=1.0A
I
C
=10A;I
B
=1.25 A
I
C
=10A;I
B
=1.67 A
I
C
=200mA ; I
B
=0
SYMBOL
2N6249 2N6250 2N6251
CONDITIONS
MIN
200
275
350
TYP.
MAX
UNIT
V
1.5
V
2.25
V
V
CE
=RatedV
CEV
;V
BE
=-1.5V
T
C
=125
V
CE
=150V;I
B
=0
V
CE
=225V;I
B
=0
V
CE
=300V;I
B
=0
V
EB
=6V; I
C
=0
10
8
6
I
C
=1A ; V
CE
=10V f=1MHz
V
CE
=30V,t=1.0s,
Nonrepetitive
2.5
5.8
5.0
10
mA
5.0
mA
1.0
50
50
50
mA
MHz
A
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
For 2N6249
I
C
=10A; I
B1
=-I
B2
=1.0A;V
CC
=200V
For 2N6250
I
C
=10A;I
B1
=-I
B2
=1.25A;V
CC
=200V
For 2N6251
I
C
=10A;I
B1
=-I
B2
=1.67A;V
CC
=200V
2.0
3.5
1.0
µs
µs
µs
2
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