3SK226
TOSHIBA Field Effect Transistor
Silicon N Channel Dual Gate MOS Type
3SK226
TV Tuner, VHF RF Amplifier Applications
FM Tuner Applications
•
•
•
Superior cross modulation performance.
Low reverse transfer capacitance: C
rss
= 0.015 pF (typ.)
Low noise figure: NF = 1.1dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
G1S
V
G2S
I
D
P
D
T
ch
T
stg
Rating
13.5
±8
±8
30
150
125
−55~125
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-3J1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.013 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
I
G1SS
I
G2SS
V
(BR) DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
⎪Y
fs
⎪
C
iss
C
rss
G
ps
NF
Test Condition
V
DS
=
0, V
G1S
= ±6
V, V
G2S
=
0
V
DS
=
0, V
G1S
=
0, V
G2S
= ±6
V
V
G1S
= −4
V, V
G2S
= −4
V, I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
0, V
G2S
=
4.5 V
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
4 V, I
D
=
100
μA
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 kHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 MHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
200 MHz (Figure 1)
Min
⎯
⎯
13.5
0
0
0.5
⎯
2.1
⎯
23
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.0
13
2.7
0.015
27
1.1
Max
±50
±50
⎯
0.1
1.0
1.5
⎯
3.3
0.03
⎯
2.2
Unit
nA
nA
V
mA
V
V
mS
pF
pF
dB
dB
1
2007-11-01
3SK226
L1: 1 mmφ Ag plated copper wire, 2 turns, 8 mm ID
L2: 1 mmφ Ag plated copper wire, 2.5 turns, 8 mm ID
Figure 1 200 MHz, G
ps
NF Test Circuit
Marking
2
2007-11-01
Analog electronics
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