3SK258 datasheet, PDF - EEWORLD Datasheet

3SK258: DescriptionN channel dual gate mos type (TV, FM tuner vhf RF amplifier applications); CategoryDiscrete semiconductor The transistor; File Size214KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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3SK258 Overview

N channel dual gate mos type (TV, FM tuner vhf RF amplifier applications)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	13.5 V
Maximum drain current (Abs) (ID)	0.03 A
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	23 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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