2SK1340
Silicon N Channel MOS FET
REJ03G0937-0300
Rev.3.00
May 15, 2006
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.3.00 May 15, 2006 page 1 of 6
2SK1340
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)*1
I
DR
Pch
*2
Tch
Tstg
Ratings
900
±30
5
12
5
100
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
900
±30
—
—
2.0
—
2.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.0
3.2
740
305
150
15
70
90
90
0.9
900
Max
—
—
±10
250
3.0
4.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 720 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 3 A, V
GS
= 10 V *
3
I
D
= 3 A, V
DS
= 20 V *
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 3 A, V
GS
= 10 V,
R
L
= 10
Ω
I
F
= 5 A, V
GS
= 0
I
F
= 5 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.3.00 May 15, 2006 page 2 of 6
2SK1340
Main Characteristics
Power vs. Temperature Derating
150
Maximum Safe Operation Area
50
20
10
is
on
th
DS (
in R
n y
tio ed b
ra t
pe imi
O L
is
ea
Ar
10
)
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
5
2
1
0.5
0.2
0.1
0.05
Ta = 25°C
1
3
µ
s
0
100
1
10
s
m
µ
s
PW
=
D
C
pe
O
ra
tio
n
m
s
(1
)
ot
Sh
50
=
(T
C
25
)
°
C
0
50
100
150
10
30
100
300 1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
10 V
6V
Pulse Test
5V
5
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
4
3
4
3
2
4.5 V
2
1
75°C
T
C
= 25°C
–25°C
4V
V
GS
= 3.5 V
1
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
5A
16
12
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V
GS
= 10 V
5
15 V
2
1
0.5
0.2
8
2A
I
D
= 1 A
0
4
8
12
16
20
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
1
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 3 of 6
2SK1340
Static Drain to Source on State
Resistance vs. Temperature
10
V
GS
= 10 V
Pulse Test
8
6
I
D
= 5 A
2A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
2
1
0.5
0.2
0.1
0.05
V
DS
= 20 V
Pulse Test
0.1
0.2
0.5
1
2
5
–25°C
Tc = 25°C
75°C
4
1A
2
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
5,000
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
2,000
1,000
500
1,000
Ciss
Coss
100
Crss
10
200
100
50
0.1
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
1,000
V
DD
= 250 V
800
400 V
600 V
V
DS
V
GS
16
I
D
= 5 A
12
20
500
Switching Characteristics
Switching Time t (ns)
200
100
50
tr
td(off)
tf
600
400
600 V
400 V
V
DD
= 250 V
20
40
60
80
100
8
20
td(on)
200
4
0
0
10 V = 10 V, V = 30 V
GS
DD
PW = 2
µs,
duty
≤
1 %
5
0.1 0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Rev.3.00 May 15, 2006 page 4 of 6
2SK1340
Reverse Drain Current vs.
Source to Drain Voltage
10
Reverse Drain Current I
DR
(A)
Pulse Test
8
6
4
2
5 V, 10 V
V
GS
= 0, –5 V
0.8
1.2
1.6
2.0
0
0.4
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
0.05
0.02
0.01
ho
1S
t
1.0
T
C
= 25°C
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.25°C/W, T
C
= 25°C
P
DM
se
Pul
0.03
T
100
µ
1m
10 m
100 m
PW
1
D = PW
T
0.01
10
µ
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
50
Ω
V
DD
= 30 V
Vin
Vout
10%
Waveforms
90%
10%
90%
90%
t
d (off)
10%
Vin
10 V
t
d (on)
t
r
t
f
Rev.3.00 May 15, 2006 page 5 of 6
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