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30Q6P45

Description
rectifier module silicon diffused type ( three phase full wave bridge applications)
CategoryDiscrete semiconductor    diode   
File Size154KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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30Q6P45 Overview

rectifier module silicon diffused type ( three phase full wave bridge applications)

30Q6P45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSFM
package instructionR-PSFM-T5
Contacts5
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PSFM-T5
JESD-609 codee0
Maximum non-repetitive peak forward current330 A
Number of components6
Phase3
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current100 µA
Reverse test voltage1200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
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