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3SK260

Description
N channel dual gate mos type (TV tuner vhf mixer,vhf RF amplifier applications)
CategoryDiscrete semiconductor    The transistor   
File Size229KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3SK260 Overview

N channel dual gate mos type (TV tuner vhf mixer,vhf RF amplifier applications)

3SK260 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionUSQ, 2-2K1B, 4 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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