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3SK296

Description
silicon N-channel dual gate mos fet
File Size181KB,8 Pages
ManufacturerRenata SA
Websitehttp://www.renata.com/
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3SK296 Overview

silicon N-channel dual gate mos fet

3SK296
Silicon N-Channel Dual Gate MOS FET
REJ03G0815-0300
(Previous ADE-208-388A)
Rev.3.00
Aug.10.2005
Application
UHF RF amplifier
Features
Low noise figure.
NF = 2.0 dB Typ. at f = 900 MHz
Capable of low voltage operation
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK–4)
2
3
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZQ–”
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 7

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