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K4S643222B-TC12R0

Description
Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86
Categorystorage    storage   
File Size448KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4S643222B-TC12R0 Overview

Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86

K4S643222B-TC12R0 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1164051151
package instructionTSSOP, TSSOP86,.46,20
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL2
Maximum access time8 ns
Maximum clock frequency (fCLK)83 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G86
JESD-609 codee0
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Humidity sensitivity level3
Number of terminals86
word count2097152 words
character code2000000
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP86,.46,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.115 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
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