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K7A401849A-PC250

Description
Standard SRAM, 256KX18, 2.5ns, CMOS, PQFP100
Categorystorage    storage   
File Size421KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
Download Datasheet Parametric View All

K7A401849A-PC250 Overview

Standard SRAM, 256KX18, 2.5ns, CMOS, PQFP100

K7A401849A-PC250 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid113243757
package instructionQFP, QFP100,.63X.87
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
YTEOL2
Maximum access time2.5 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
memory density4718592 bit
Memory IC TypeSTANDARD SRAM
memory width18
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply2.5 V
Certification statusNot Qualified
Maximum standby current0.04 A
Minimum standby current2.37 V
Maximum slew rate0.44 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
K7A403649A
K7A401849A
Document Title
PRELIMINARY
128Kx36 & 256Kx18 Synchronous SRAM
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No
0.0
0.1
0.2
History
Initial draft
Add tCYC 300MHz.
1. Changed DC condition at Icc and I
SB.
Icc ; from 500mA to 550mA at -30,
from 450mA to 500mA at -27,
from 390mA to 440mA at -25,
from 360mA to 410mA at -22,
from 340mA to 390mA at -20,
from 300mA to 350mA at -16,
I
SB
; from 150mA
from 140mA
from 130mA
from 120mA
from 110mA
from 90mA
to
to
to
to
to
to
160mA
150mA
140mA
130mA
120mA
100mA
at
at
at
at
at
at
-30,
-27,
-25,
-22,
-20,
-16,
Draft Date
Nov . 05. 1999
Feb. 10. 2000
April. 03. 2000
Remark
Preliminary
Preliminary
Preliminary
I
SB1
; from 50mA to 80mA ,
I
SB2
; from 30mA to 40mA ,
0.3
1. Changed input & output capacitance.
C
IN
; from 6pF to 5pF,
C
OUT
; from 8pF to 7pF,
2.Changed part number
from K7A4036(18)44A -under 150MHz to K7A4036(18)49A -over167MHz
Remove 300MHz( -30 )
May. 15. 2000
Preliminary
0.4
July. 25. 2000
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2000
Rev 0.4
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