SHD285808SV datasheet, PDF - EEWORLD Datasheet

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SHD285808SV: DescriptionPower Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size328KB，3 Pages; ManufacturerSENSITRON; Websitehttp://www.sensitron.com/

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SHD285808SV Overview

Power Field-Effect Transistor,

SHD285808SV Parametric

Parameter Name	Attribute value
Objectid	8338686146
package instruction	,
Reach Compliance Code	compliant
Country Of Origin	USA
ECCN code	EAR99
YTEOL	6.12
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.105 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	170 pF
JESD-30 code	R-MBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	120 A
Guideline	MIL-19500
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	160 ns
Maximum opening time (tons)	125 ns

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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5550, Rev -

SHD285808

HERMETIC POWER MOSFET

P-CHANNEL

FEATURES:



200 Volt, 0.1 Ohm, 40A P Channel MOSFET



SMD-2 Hermetic Metal Package



Fast Switching



Low R

DS (on)



Rohs Compliant Option – For Rohs compliance, use suffix -G

MAXIMUM RATINGS

ALL RATINGS ARE AT T

= 25C UNLESS OTHERWISE SPECIFIED.

SYMBOL

D (25)

STG

MIN.

-55

TYP.

MAX.



- 40

- 120

+150

300

UNITS

Volts

Amps

C

Watts

RATING

GATE TO SOURCE VOLTAGE

ON-STATE DRAIN CURRENT

PULSED DRAIN CURRENT

@ T

= 25C

OPERATING AND STORAGE TEMPERATURE

TOTAL DEVICE DISSIPATION @ T

= 25C

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

= 0V, I

= - 0.25mA

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

= - 10V, I

= 0.5I

D25

GATE THRESHOLD VOLTAGE V

= V

, I

= - 250A

FORWARD TRANSCONDUCTANCE

= - 10V; I

= 0.5I

D25

ZERO GATE VOLTAGE DRAIN CURRENT

= V

DSS

= 0V, T

= 125C

GATE TO SOURCE LEAKAGE FORWARD

= 20V

GATE TO SOURCE LEAKAGE REVERSE

= -20V

TURN ON DELAY TIME

= 0.5V

DSS’,

RISE TIME

= 0.5I

D25,

TURN OFF DELAY TIME

= 2,

FALL TIME

= - 10V

DIODE FORWARD VOLTAGE

= - 24A

’

= 0V

Pulse test, t



300

s,

duty cycle d



2 %

REVERSE RECOVERY TIME

REVERSE RECOVERY CHARGE

= - 24A,

’

= 0V, di/dt = 100A/sec, V

= 100V

INPUT CAPACITANCE

= 0 V

OUTPUT CAPACITANCE

= - 25 V

REVERSE TRANSFER CAPACITANCE

f = 1MHz

THERMAL RESISTANCE, JUNCTION TO CASE

DSS

DS(ON)

GS(th)

- 200

Volts



Volts

S(1/)

μA

- 2.0

0.09

0.105

- 4.0

DSS

GSS

d(ON)

d(OFF)

iss

oss

rss

thJC

260

4.2

5400

1540

170

- 25

- 200

100

-100

110

- 3.3

400

nsec

Volts

nsec

μC

0.42

C/W

2019

Sensitron Semiconductor PH (631) 586-7600



FAX (631) 242-9798



www.sensitron.com



sales@sensitron.com

SHD285808

SENSITRON

TECHNICAL DATA

DATA SHEET 5550, Rev -

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the

datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical

equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of

users’ fail-safe precautions or other arrangement .

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of

the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any

other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at

a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron

Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder

maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When

exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.

2019

Sensitron Semiconductor PH (631) 586-7600



FAX (631) 242-9798



www.sensitron.com



sales@sensitron.com

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