Data Sheet
26301.102b
3935
Package ED, 44-Pin PLCC
3-PHASE POWER MOSFET CONTROLLER
— For Automotive Applications
The A3935 is designed specifically for automotive applications that
require high-power motors. Each provides six high-current gate drive
outputs capable of driving a wide range of n-channel power MOSFETs.
A requirement of automotive systems is steady operation over a
varying battery input range. The A3935 integrates a pulse-frequency
modulated boost converter to create a constant supply voltage for
driving the external MOSFETs. Bootstrap capacitors are utilized to
provide the above battery supply voltage required for n-channel FETs.
Direct control of each gate output is possible via six TTL-compat-
ible inputs. A differential amplifier is integrated to allow accurate
measurement of the current in the three-phase bridge.
Package JP, 48-Pin LQFP
Package LQ, 36-Pin SOIC
Diagnostic outputs can be continuously monitored to protect the
driver from short-to-battery, short-to-supply, bridge-open, and battery
under/overvoltage conditions. Additional protection features include
dead-time, VDD undervoltage, and thermal shutdown.
The A3935 is supplied in a choice of three packages, a 44-lead
PLCC with copper batwing tabs (suffix ED), a 48-lead low profile QFP
with exposed thermal pad (suffix JP), and a 36-lead 0.8 mm pitch SOIC
(suffix LQ).
ABSOLUTE MAXIMUM RATINGS
Load Supply Voltages, VBAT, VDRAIN,
VBOOST, BOOSTD ...
-0.6 V to 40 V
Output Voltage Ranges,
GHA/GHB/GHC, V
GHX
..
-4 V to 55 V
SA/SB/SC, V
SX
...............
-4 V to 40 V
GLA/GLB/GLC, V
GLX
....
-4 V to 16 V
CA/CB/CC, V
CX
..........
-0.6 V to 55 V
Sense Circuit Voltages,
CSP,CSN, LSS ...............
-4 V to 6.5 V
Logic Supply Voltage,
V
DD
...........................
-0.3 V to +6.5 V
Logic Input/Outputs and OVSET, BOOSTS,
CSOUT, VDSTH .........
-0.3 V to 6.5 V
Operating Temperature Range,
T
A
...........................
-40°C to +135°C
Junction Temperature, T
J
...........
+150°C
Storage Temperature Range,
T
S
...........................
-55°C to +150°C
* Fault conditions that produce excessive
junction temperature will activate device
thermal shutdown circuitry. These conditions
can be tolerated, but should be avoided.
FEATURES
!
Drives wide range of n-channel MOSFETs in 3-phase bridges
!
PFM boost converter for use with low-voltage battery supplies
!
Internal LDO regulator for gate-driver supply
!
Bootstrap circuits for high-side gate drivers
!
Current monitor output
!
Adjustable battery overvoltage detection.
!
Diagnostic outputs
Motor lead short-to-battery, short-to-ground, and
bridge-open protection
!
Undervoltage protection
!
-40 °C to +150 °C, T
J
operation
!
Thermal shutdown
!
Always order by complete part number, e.g.,
A3935KLQ
.
3935
THREE-PHASE POWER
MOSFET CONTROLLER
Functional Block Diagram
See pages 8 and 9 for terminal assignments and descriptions.
2
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Copyright © 2003 Allegro MicroSystems, Inc.
3935
THREE-PHASE POWER
MOSFET CONTROLLER
A3935KED (PLCC)
A3935KLQ (SOIC)
* Measured on “High-K” multi-layer PWB per JEDEC Standard JESD51-7.
† Measured on typical two-sided PWB with power tabs (terminals 1, 2, 11, 12, 22, 23, 34, and 35) connected to copper foil with an
area of 3.8 square inches (2452 mm
2
) on each side. See Application Note 29501.5,
Improving Batwing Power Dissipation,
for
additional information.
www.allegromicro.com
3
3935
THREE-PHASE POWER
MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS:
unless otherwise noted at T
J
= -40°C to +150°C, V
BAT
= 7 V to 16 V,
V
DD
= 4.75 V to 5.25 V, ENABLE = 22.5 kHz, 50% Duty Cycle, Two Phases Active.
Limits
Characteristics
Power Supply
V
DD
Supply Current
V
BAT
Supply Current
Battery Voltage Operating Range
Bootstrap Diode Forward Voltage
I
DD
I
BAT
V
BAT
V
DBOOT
I
DBOOT
= -I
cx
= 10 mA, V
DBOOT
= V
REG
– V
CX
I
DBOOT
= -I
cx
= 100 mA
Bootstrap Diode Resistance
Bootstrap Diode Current Limit
Bootstrap Quiescent Current
Bootstrap Refresh Time
VREG Output Voltage
1
VREG Dropout Voltage
2
Gate Drive Avg. Supply Current
VREG Input Bias Current
Boost Supply
V
BOOST
Output Voltage Limit
V
BOOST
Output Volt. Limit Hyst.
Boost Switch ON Resistance
Max. Boost Switch Current
Boost Current Limit Threshold Volt.
OFF Time
Blanking Time
V
BOOSTM
∆V
BOOSTM
r
DS(on)
I
BOOSTSW
V
BI(th)
t
off
t
blank
Increasing V
BOOSTS
I
BOOSTD
< 300 mA
V
BAT
= 7 V
14.9
35
–
–
0.45
3.0
100
–
–
1.4
–
–
–
–
16.3
180
3.3
300
0.55
8.0
220
V
mV
Ω
mA
V
µs
ns
r
DBOOT
I
DM
I
CX
t
refresh
V
REG
V
REGDO
I
REG
I
REGBIAS
r
D
(100 mA) = [V
D
(150 mA) – V
D
(50 mA)]/100 mA
3 V < [V
REG
– V
CX
] < 12 V
V
CX
= 40 V, GHx = ON
V
SX
= low to guarantee
∆V
= +0.5 V refresh of
0.47 µF Boot Cap at V
cx
– V
sx
= +10 V
V
BAT
= 7 V to 40 V, V
BOOST
from Boost Reg
V
REGDO
= V
boost
– V
reg
, I
reg
= 40 mA
No external dc load at VREG, C
REG
= 10 µF
Current into V
BOOST
, ENABLE = 0
All logic inputs = 0 V
All logic inputs = 0 V
–
–
7.0
0.8
1.5
2.5
-150
10
–
12.7
–
–
–
–
–
–
–
–
–
–
–
–
–
0.9
–
–
7.0
3.0
40
2.0
2.3
7.5
-1150
30
2.0
14
–
40
4.0
mA
mA
V
V
V
Ω
mA
µA
µs
V
V
mA
mA
Symbol
Conditions
Min
Typ
Max
Units
NOTES: Typical Data and Typical Characteristics are for design information only.
Negative current is defined as coming out of (sourcing) the specified device terminal.
1. For V
BOOSTM
< V
BOOST
< 40 V power dissipation in the V
REG
LDO increases. Observe T
J
< 150 °C limit.
2. With V
BOOST
decreasing Dropout Voltage measured at V
REG
= V
REGref
– 200 mV where V
REG(ref)
= V
REG
at V
BOOST
= 16 V.
4
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Continued next page …
3935
THREE-PHASE POWER
MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS:
unless otherwise noted at T
J
= -40°C to +150°C, V
BAT
= 7 V to 16 V,
V
DD
= 4.75 V to 5.25 V, ENABLE = 22.5 kHz, 50% Duty Cycle, Two Phases Active.
Characteristics
Control Logic
Logic Input Voltages
Logic Input Currents
Input Hysteresis
Logic Output High Voltage
Logic Output Low Voltage
Output High Voltage
Source Current (pulsed)
Source ON Resistance
V
I(1)
V
I(0)
I
I(1)
I
I(0)
V
hys
V
O(H)
V
I(L)
V
DSL(H)
I
xU
r
SDU(on)
I
O(H)
= -800 µA
I
O(L)
= 1.6 mA
GHx: I
xU
= –10 mA, V
sx
= 0
GLx: I
xU
= –10 mA, V
lss
= 0
V
SDU
= 10 V, T
J
= 25 °C
V
SDU
= 10 V, T
J
= 135 °C
I
xU
= –150 mA, T
J
= 25 °C
I
xU
= –150 mA, T
J
= 35 °C
Gate Drives, GLx ( internal SINK or lower switch stages)
Sink Current (pulsed)
Sink ON Resistance
Gate Drives, GHx, GLx (General)
Phase Leakage (Source)
Propagation Delay, Logic only
Output Skew Time
Dead Time (Shoot-Through
Prevention)
I
Sx
t
pd
t
sk(o)
t
dead
ENABLE = 0, V
Sx
= 1.7 V
Logic input to unloaded GHx, GLx
Grouped by edge, phase-to-phase
Between GHx, GLx transitions of same phase
0
–
–
75
–
–
–
–
100
150
50
180
µA
ns
ns
ns
I
xL
r
DSL(on)
V
DSL
= 10 V, T
J
= 25 °C
V
DSL
= 10 V, T
J
= 135 °C
I
xL
= +150 mA, T
J
= 25 °C
I
xL
= +150 mA, T
J
= 135 °C
–
550
1.8
3.0
850
–
–
–
–
–
6.0
7.5
mA
mA
Ω
Ω
Minimum high level input for logical “one”
Maximum low level input for logical “zero”
V
I
= V
DD
V
I
= 0.8 V
2.0
–
–
50
100
V
DD
– 0.8
–
V
REG
– 2.26
V
REG
– 0.26
–
400
4.0
7.0
–
–
–
–
–
–
–
–
–
800
–
–
–
–
0.8
500
–
300
–
0.4
V
REG
V
REG
–
–
10
15
V
V
µA
µA
mV
V
V
V
V
mA
mA
Ω
Ω
Symbol
Conditions
Limits
Min
Typ
Max
Units
Gate Drives, GHx ( internal SOURCE or upper switch stages)
NOTES: Typical Data and Typical Characteristics are for design information only.
Negative current is defined as coming out of (sourcing) the specified device terminal.
For GH
X
: V
SDU
= V
CX
– V
GHX
, V
DSL
= V
GHX
– V
SX
, V
DSL(H)
= V
CX
– V
SDU
– V
SX
.
For GL
X
: V
SDU
= V
REG
– V
GLX
, V
DSL
= V
GLX
– V
LSS
, V
DSL(H)
= V
REG
– V
SDU
– V
LSS.
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