5962-8872505LX datasheet, PDF - EEWORLD Datasheet

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5962-8872505LX: DescriptionStandard SRAM, 256KX1, 25ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24; Categorystorage storage; File Size179KB，7 Pages; ManufacturerCypress Semiconductor

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5962-8872505LX Overview

Standard SRAM, 256KX1, 25ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24

5962-8872505LX Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP, DIP24,.3
Contacts	24
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	25 ns
I/O type	SEPARATE
JESD-30 code	R-CDIP-T24
length	30.48 mm
memory density	262144 bi
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of terminals	24
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX1
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum seat height	3.81 mm
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.135 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	PALLADIUM GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Base Number Matches	1

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5962-8872505LX Related Products

	5962-8872505LX	5962-8872502LX	5962-8872505XX	5962-8872501LX
Description	Standard SRAM, 256KX1, 25ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	Standard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	Standard SRAM, 256KX1, 25ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 256KX1, 35ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24
Parts packaging code	DIP	DIP	QLCC	DIP
package instruction	DIP, DIP24,.3	DIP, DIP24,.3	QCCN,	DIP, DIP24,.3
Contacts	24	24	28	24
Reach Compliance Code	unknow	unknow	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	25 ns	45 ns	25 ns	35 ns
JESD-30 code	R-CDIP-T24	R-CDIP-T24	R-CQCC-N28	R-GDIP-T24
memory density	262144 bi	262144 bi	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1
Number of functions	1	1	1	1
Number of terminals	24	24	28	24
word count	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	256KX1	256KX1	256KX1	256KX1
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	QCCN	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE
Parallel/Serial	SERIAL	PARALLEL	SERIAL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.81 mm	5.08 mm	2.03 mm	5.08 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	PALLADIUM GOLD	PALLADIUM GOLD	PALLADIUM GOLD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL	QUAD	DUAL
width	7.62 mm	7.62 mm	8.89 mm	7.62 mm
Base Number Matches	1	1	1	1
I/O type	SEPARATE	SEPARATE	-	SEPARATE
length	30.48 mm	-	13.97 mm	31.877 mm
Output characteristics	3-STATE	3-STATE	-	3-STATE
Encapsulate equivalent code	DIP24,.3	DIP24,.3	-	DIP24,.3
power supply	5 V	5 V	-	5 V
Filter level	38535Q/M;38534H;883B	MIL-STD-883	-	MIL-STD-883
Maximum standby current	0.02 A	0.02 A	-	0.02 A
Minimum standby current	4.5 V	4.5 V	-	4.5 V
Maximum slew rate	0.135 mA	0.12 mA	-	0.12 mA

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