Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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the references to Nexperia, as shown below.
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use
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
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-
© Nexperia B.V. (year). All rights reserved.
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NXP Semiconductors
Product data sheet
NPN general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 50 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB710A.
MARKING
TYPE NUMBER
2PD602AQ
2PD602AR
2PD602AS
MARKING CODE
XQ
XR
XS
handbook, halfpage
2PD602A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
MAM321
1
Top view
2
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
50
5
500
1
200
250
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 23
2
NXP Semiconductors
Product data sheet
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
2PD602AQ
2PD602AR
2PD602AS
DC current gain
V
CEsat
C
c
f
T
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PD602AQ
2PD602AR
2PD602AS
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
I
C
= 500 mA; V
CE
= 10 V; note 1
I
C
= 300 mA; I
B
= 30 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz; note 1
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 4 V
I
C
= 150 mA; V
CE
= 10 V; note 1
85
120
170
40
−
−
140
160
180
170
240
340
−
600
15
−
−
−
−
−
−
MIN.
5
10
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
2PD602A
UNIT
K/W
MAX.
10
UNIT
nA
μA
nA
mV
pF
MHz
MHz
MHz
1999 Apr 23
3
NXP Semiconductors
Product data sheet
NPN general purpose transistor
PACKAGE OUTLINE
2PD602A
Plastic surface mounted package; 3 leads
SOT346
E
D
B
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.3
1.0
A
1
0.1
0.013
b
p
0.50
0.35
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
1.9
e
1
0.95
H
E
3.0
2.5
L
p
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
OUTLINE
VERSION
SOT346
REFERENCES
IEC
JEDEC
TO-236
EIAJ
SC-59
EUROPEAN
PROJECTION
ISSUE DATE
98-07-17
1999 Apr 23
4
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