WBC-T0303GG-03-2671-DF datasheet, PDF

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WBC-T0303GG-03-2671-DF: DescriptionArray/Network Resistor, Center Tap, Thin Film, 0.25W, 2670ohm, 100V, 0.5% +/-Tol, -25,25ppm/Cel, 0303,; CategoryPassive components The resistor; File Size376KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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WBC-T0303GG-03-2671-DF Overview

Array/Network Resistor, Center Tap, Thin Film, 0.25W, 2670ohm, 100V, 0.5% +/-Tol, -25,25ppm/Cel, 0303,

WBC-T0303GG-03-2671-DF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	802693839
Reach Compliance Code	compliant
ECCN code	EAR99
structure	Chip
Network Type	Center Tap
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package length	0.762 mm
Package form	SMT
Package width	0.762 mm
method of packing	Tray
Rated power dissipation(P)	0.25 W
resistance	2670 Ω
Resistor type	ARRAY/NETWORK RESISTOR
series	WBC(TAPPED)
size code	0303
technology	THIN FILM
Temperature Coefficient	25 ppm/°C
Tolerance	0.5%
Operating Voltage	100 V

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Wire Bondable

Chip Resistors

WBC Series

•

Discrete or tapped schematics

•

MIL inspection available

•

High resistor density

IRC Advanced Film Division

IRC’s WBC series wire bondable chip resistors are ideally suited for

the most demanding hybrid application. The WBC combines IRC’s

TaNSil

tantalum nitride thin ﬁlm technology with silicon substrate processing to produce an extremely small

footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil

resistor ﬁlm.

Available in a wide range of tolerances and temperature coefﬁcients to ﬁt a variety of hybrid circuit applica-

tions. Custom resistance values, sizes and schematics are available on request from the factory.

Physical Data

R0202 - Discrete

(0.508mm ±0.025)

0.020˝ ±0.001

Electrical Data

Absolute Tolerance

Absolute TCR

Package Power Rating

(@ 70°C)

Rated Operating Voltage

(not to exceed

√

P x R )

Operating Temperature

Back contact

Noise

Substrate Material

Top contact

Substrate Thickness

Aluminum

Gold

R0202 and

T0303

B0202

Passivation

to ±0.1%

to ±25ppm/°C

250mW

100V

-55°C to +150°C

<-30dB

Oxidized Silicon

(10KÅ SiO

min)

0.010˝ ±0.001

(0.254mm ±0.025)

10KÅ minimum

15KÅ minimum

Silicon

(Gold available)

Gold

3KÅ minimum

Silicon Dioxide or

Silicon Nitride

0.004˝ min bond pad size

0.020˝ ±0.001

(0.508mm ±0.025)

B0202 - Discrete back contact

(0.508mm ±0.025)

0.020˝ ±0.001

Top contact

pad chamfered

0.004˝ min bond pad size

0.020˝ ±0.001

(0.508mm ±0.025)

T0303 - Tapped network ½R + ½R

Bond Pad

Metallization

(0.762mm ±0.025)

0.030˝ ±0.001

Backside

½R

0.030˝ ±0.001

(0.762mm ±0.025)

0.004˝ min bond pad size

General Note

IRC reserves the right to make changes in product speciﬁcation without notice or liability.

All information is subject to IRC’s own data and is considered accurate at time of going to print.

• Corpus Christi Texas 78411 USA

Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Email: afdsales@irctt.com • Website: www.irctt.com

A subsidiary of

TT electronics plc

WBC Series Issue April 2006

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