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TGBR3S100G-Z21D-K

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size178KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

TGBR3S100G-Z21D-K Overview

Rectifier Diode,

TGBR3S100G-Z21D-K Parametric

Parameter NameAttribute value
Objectid8341754190
Reach Compliance Codecompliant
ECCN codeEAR99
Date Of Intro2018-11-06
YTEOL6.08
applicationGENERAL PURPOSE
Minimum breakdown voltage100 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.93 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current130 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse current10.5 µA
Maximum reverse recovery time0.028 µs
Reverse test voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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