Surface Mount RF Schottky
Barrier Diodes
Technical Data
HSMS-28XX Series
Features
• Surface Mount SOT-23/SOT-
143 Package
• Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
• Low FIT (Failure in Time)
Rate*
• Six-sigma Quality Level
• Single, Dual and Quad
Versions
• Tape and Reel Options
Available
* For more information see the
Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification
TOP VIEW
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
1
#0
2
1
#2
2
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
RING
QUAD
3
4
BRIDGE
QUAD
3
4
CROSS-OVER
QUAD
3
4
1
#5
2
1
#7
2
1
#8
2
1
#9
2
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. Typical
applications of these Schottky
diodes are mixing, detecting,
switching, sampling, clamping,
and wave shaping. The
HSMS-2800 series of diodes is
optimized for high voltage
applications. The HSMS-2810
series of diodes features very low
flicker (1/f) noise. The
HSMS-2820 series of diodes is the
best all-around choice for most
applications, featuring low series
resistance, low forward voltage at
all current levels and good RF
characteristics. The HSMS-2860
series is a high performance
diode offering superior V
f
and
ultra-low capacitance.
Note that HP’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
2
Electrical Specifications T
A
= 25
°
C, Single Diode
[4]
Part
Package
Num-
Mark-
ber
ing
Lead
[5]
[3]
Code
Code Configuration
HSMS
2800
2802
2803
2804
2805
2807
2808
2810
2812
2813
2814
2815
2817
2818
2820
2822
2823
2824
2825
2827
2828
2829
2860
2862
2863
2864
2865
A0
A2
A3
A4
A5
A7
A8
B0
B2
B3
B4
B5
B7
B8
C0
C2
C3
C4
C5
C7
C8
C9
T0
T1
T3
T4
T5
0
2
3
4
5
7
8
0
2
3
4
5
7
8
0
2
3
4
5
7
8
9
0
2
3
4
5
Single
Series
Common Anode
Common
Cathode
Unconnected
Pair
Ring Quad
[6]
Bridge Quad
[6]
Single
Series
Common Anode
Common
Cathode
Unconnected
Pair
Ring Quad
[6]
Bridge Quad
[6]
Single
Series
Common Anode
Common
Cathode
Unconnected
Pair
Ring Quad
[6]
Bridge Quad
[6]
Cross-over Quad
Single
Series Pair
Common Anode
Common
Cathode
Unconnected
Pair
None
4
350
0.6
30
—
0.35
10
2835
15*
340
0.7 30
100
1
1.0
12
2810
(1N5712)
20
400
1.0 35
200 15
1.2
15
Nearest
Equivalent
Axial Lead
Part No.
5082-
2800
(1N5711)
Minimum
Break-
down
Voltage
V
BR
(V)
70
Maxi-
mum
Forward
Voltage
V
F
(mV)
400
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
1.0 15
Maximum
Reverse
Leakage
I
R
(nA) @
V
R
(V)
200 50
Maxi-
mum
Capac-
itance
C
T
(pF)
2.0
Typical
Dynamic
Resis-
tance
R
D
(Ω)
[6]
35
Test Conditions
I
R
= 10
µA
*I
R
=
100
µA
I
F
=
1 mA
[1]
V
F
= 0 V
f=
1.0 MHz
[2]
I
F
= 5 mA
Notes:
1.
∆V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
∆C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA, except HSMS-282X which
is measured at 20 mA.
5. See section titled “Quad Capacitance.”
6. R
D
= R
S
+ 5.2
Ω
at 25°C and I
f
= 5 mA.
3
Absolute Maximum Ratings
[1]
T
A
= 25°C
Symbol
I
f
P
t
P
IV
T
j
T
stg
Parameter
Forward Current (1 ms Pulse)
Total Device Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Value
1 Amp
250 mW
[2]
Same as V
BR
150°C
-65 to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
2. CW Power Dissipation at T
LEAD
= 25°C. Derate to zero at maximum rated
temperature.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. HP defines this
measurement as “CM”, and it is
equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
3
+ C
4
C
1
+ C
2
A
C
1
C
C
2
C
4
B
C
3
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
1
1
–– + –– + ––
C
2
C
3
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
Units
V
pF
eV
A
A
Ω
V
HSMS-280X
75
1.6
0.69
10E-5
3 x 10E - 8
1.08
30
0.65
2
0.5
HSMS-281X
25
1.1
0.69
10E-5
4.8 x 10E - 9
1.08
10
0.65
2
0.5
HSMS-282X
15
0.7
0.69
10E-4
2.2 x 10E -8
1.08
6.0
0.65
2
0.5
HSMS-286X
7.0
0.18
0.69
10E-5
5.0 x 10E -8
1.08
5.0
0.65
2
0.5
4
Typical Parameters at T
A
= 25
°
C (unless otherwise noted), Single Diode
30
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
30
30
30
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
10
I
F
(Left Scale)
10
85°C
1
55°C
25°C
–5°C
0.1
–35°C
I
F
- FORWARD CURRENT (mA)
10
10
1
85°C
55°C
25°C
∆V
F
(Right Scale)
1
1
0.1
–5°C
–35°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.01
0.1 0.2 0.3 0.4 0.5
0.6 0.7 0.8 0.9
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
0.01
0.1
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 1. Typical Forward Current vs.
Forward Voltage at Temperatures—
HSMS-2800 Series
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
30
30
Figure 2. Typical V
f
Match, HSMS-2800
Series Pairs and Quads.
Figure 3. Typical Forward Current vs.
Forward Voltage at Temperatures—
HSMS-2810 Series.
30
30
30
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
10
10
I
F
(Left Scale)
10
10
I
F
(Left Scale)
10
1
85°C
55°C
1
∆V
F
(Right Scale)
1
0.1
25°C
–55°C
–35°C
1
∆V
F
(Right Scale)
1
0.3
0.3
0.4
0.5
0.5
0.6
0.3
0.7
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Typical V
f
Match, HSMS-2810
Series Pairs and Quads.
Figure 5. Typical Forward Current vs.
Forward Voltage At Temperatures—
HSMS-2820 Series.
Figure 6. Typical V
f
Match, HSMS-2820
Series Pairs and Quads at Mixer Bias
Levels.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
100
1.0
100
100
10
I
F
- FORWARD CURRENT (µA)
10
I
F
(Left Scale)
10
I
F
- FORWARD CURRENT (µA)
FORWARD CURRENT (mA)
I
F
(Left Scale)
10
1
85°C
25°C
0.1
–55°C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE (V)
∆V
F
(Right Scale)
∆V
F
(Right Scale)
1
0.10
0.15
0.20
0.1
0.25
1
0.05
0.10
0.15
0.20
1.0
0.25
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 7. Typical V
f
Match, HSMS-2820
Series Pairs at Detector Bias Levels.
Figure 8. Typical Forward Current vs.
Forward Voltage at Temperature,
HSMS-2860 Series.
Figure 9. Typical V
f
Match, HSMS-2860
Series Pairs at Detector Bias Levels.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
5
Typical Parameters,
continued
100,000
100,000
100,000
10,000
10,000
10,000
I
R
– REVERSE CURRENT (nA)
I
R
– REVERSE CURRENT (nA)
1000
1000
I
R
– REVERSE CURRENT (nA)
1000
100
100
100
10
1
0
10
20
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
30
40
50
10
1
0
5
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
10
1
0
2
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
4
6
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
Figure 10. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-2800 Series.
Figure 11. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-2810 Series.
Figure 12. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-2820 Series.
1000
2
1.25
R
D
– DYNAMIC RESISTANCE (Ω)
C
T
– CAPACITANCE (pF)
C
T
– CAPACITANCE (pF)
0
10
20
30
40
50
1.5
1
100
0.75
1
0.50
10
HSMS-2800 SERIES
HSMS-2810 SERIES
HSMS-2820 SERIES
1
10
100
0.5
0.25
1
0.1
0
V
R
– REVERSE VOLTAGE (V)
0
0
2
4
6
8
10
12
14
16
V
R
– REVERSE VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
Figure 13. Dynamic Resistance vs.
Forward Current—HSMS-2800 Series.
Figure 14. Total Capacitance vs.
Reverse Voltage—HSMS-2800 Series.
Figure 15. Total Capacitance vs.
Reverse Voltage—HSMS-2810 Series.
1
Profile Option Descriptions
-BLK = Bulk
-TR1 = 3K pc. Tape and Reel, Device Orientation; See Figures 17 and 18
-TR2 = 10K pc. Tape and Reel, Device Orientation; See Figures 17 and 18
Tape and Reeling conforms to Electronic Industries RS-481, “Taping of
Surface Mounted Components for Automated Placement.”
C
T
– CAPACITANCE (pF)
0.8
0.6
0.4
0.2
0
0
2
4
6
8
V
R
– REVERSE VOLTAGE (V)
Ordering Information
Specify part number followed by option under. For example:
H
SMS - 28XX - XXX
Bulk or Tape and Reel Option
Part Number
Surface Mount Schottky
Hewlett-Packard
Figure 16. Total Capacitance vs.
Reverse Voltage—HSMS-2820 Series.
Applications Information
Schottky Diode Fundamentals
See the HSMS-280A series data sheet.
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