HIGH ISOLATION VOLTAGE
DARLINGTON TRANSISTOR TYPE
6 PIN OPTOCOUPLER
FEATURES
• HIGH ISOLATION VOLTAGE
BV: 5 k V
r.m.s.
MIN
• HIGH SPEED SWITCHING
t
r
, t
f
= 100
µs
TYP
• ULTRA HIGH CURRENT TRANSFER RATIO
CTR: 300% TYP
PS2603
PS2603L
PS2604
PS2604L
DESCRIPTION
PS2603, PS2604 ,PS2603L and PS2604L are optically coupled
isolators containing a GaAs light emitting diode and an NPN
silicon Darlington-connected phototransistor. PS2603 and
PS2604 are in a plastic DIP (Dual In-line Package). PS2603L
and PS2604L are lead bending type (Gull-wing) for surface
mount. PS2603 and PS2603L have a base pin, PS2604 and
PS2604L have no base pin.
APPLICATIONS
Interface circuit for various instrumentations and control
equipment.
• AC LINE / DIGITAL LOGIC
• DIGITAL LOGIC / DIGITAL LOGIC
• TWISTED PAIR LINE RECEIVER
• TELEPHONE / TELEGRAPH LINE RECEIVER
• HIGH FREQUENCY POWER SUPPLY
FEEDBACK CONTROL
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
SYMBOLS
Diode
V
F
I
R
C
Transistor
I
CEO
BV
CEO
BV
ECO
CTR
V
CE(sat)
Coupled
R
1-2
C
1-2
t
r
t
f
PARAMETERS
Forward Voltage, I
F
= 10 mA
Reverse Current, V
R
= 5 V
Junction Capacitance, V= 0, f = 1.0 MHz
Collector to Emitter Dark Current, V
CE
= 40 V, I
F
= 0
Collector to Emitter Breakdown Voltage, I
C
= 1 mA, I
B
= 0
Emitter to Collector Breakdown Voltage, I
E
= 100
µA,
I
B
= 0
Current Transfer Ratio
1
, I
F
= 1 mA, V
CE
= 2 V
Collector Saturation Voltage, I
F
= 1 mA, I
C
= 2 mA
Isolation Resistance, V
IN-OUT
= 1.0 k V
Isolation Capacitance, V = 0, f = 1.0 MH
Z
Rise Time
2
, V
CC
= 10 V, I
C =
10 mA
Fall Time
2
, V
CC
= 10 V, I
C
= 10 mA
UNITS
V
µA
pF
nA
V
V
%
V
Ω
pF
µs
µs
2. Test Circuit for Switching Time
10
11
0.6
100
100
40
6
200
2000
1.0
30
400
PS2603, PS2603L, PS2604, PS2604L
MIN
TYP
1.1
MAX
1.4
5
Notes:
1. CTR Rank
KD : 2000 to %
LD : 700 to 3400 %
MD : 200 to 1000 %
6
5
4
6
5
4
PULSE INPUT
1
5
V
CC
PULSE INPUT
1 ms
(
PW =Cycle = 1/10
)
Duty
1
5
V
CC
(
PW = 1 ms
Duty Cycle = 1/10
)
IF
2
4
50
Ω
R
L
= 100
Ω
V
OUT
IF
2
4
V
OUT
R
L
= 100
Ω
6
50
Ω
1
2
3
1
2
3
PS2603
PS2604
PS2603
PS2604
California Eastern Laboratories
PS2603, PS2603L, PS2604, PS2604L
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
Diode
V
R
I
F
P
D
I
F (PEAK)
Transistor
V
CEO
V
ECO
I
C
P
C
Coupled
BV
T
STG
T
OP
PARAMETERS
Reverse Voltage
Forward Current (DC)
Power Dissipation
Peak Forward Current
(PW = 100
µs,
Duty Cycle 1%)
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation
Isolation Voltage
2
Storage Temperature
Operating Temperature
UNITS
V
mA
mW
A
RATINGS
6
80
150
1
Notes
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. AC voltage for 1 minute at T
A
= 25° C, RH = 60% between input
(Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common).
V
V
mA
mW
V
r.m.s.
°C
°C
40
6
200
200
5000
-55 to +150
-55 to +100
TYPICAL PERFORMANCE CURVES
(T
A
= 25°)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
200
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation, P
D
(mW)
Diode Power Dissipation, P
D
(mW)
150
150
100
100
50
50
0
25
50
75
100
0
25
50
75
100
Ambient Temperature, T
A
(°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
T
A
= 100 ˚C
75 ˚C
50 ˚C
10
25 ˚C
0 ˚C
-25 ˚C
-55 ˚C
140
Ambient Temperature , T
A
(°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
120
Collector Current, I
C
(mA)
Forward Current, I
F
(mA)
100
5 mA
80
2 mA
1
60
40
0.1
1 mA
20
I
F
= 0.5 mA
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
Forward Voltage, V
F
(V)
Collector to Emitter Voltage, V
CE
(V)
PS2603, PS2603L, PS2604, PS2604L
TYPICAL PERFORMANCE CURVES
(T
A
= 25°)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current, I
CEO
(nA)
50000
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
1000
10 mA
10000
Collector Current, I
C
(nA)
1000
40 V
24 V
10 V
5V
V
CE
= 2 V
100
5 mA
1 mA
10
0.5 mA
100
0.2 mA
1
I
F
= 0.1 mA
10
1
-60
-40
-20
0
20
40
60
80
100
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
Ambient Temperature, T
A
(°C)
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
1.2
5000
Collector Saturation Voltage, V
CE
(
sat)
(V)
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
V
CE
= 2 V
∆CTR,
Normalized Output Current
1.0
Current Transfer Ratio, CTR, (%)
4000
Sample A
B
3000
0.8
0.6
2000
C
D
0.4
Normalized to 1.0
at T
A
= 25 ˚C
I
F
= 1 mA, V
CE
= 2 V
0.2
1000
0
-55
-25
0
25
50
75
100
0
0.05 0.1
1
5
10
50
Ambient Temperature,T
A
(°C)
SWITCHING TIME vs.
LOAD RESISTANCE
2000
1000
t
on
V
CC
= 10 V
I
C
= 2 mA
Forward Current, I
F
(mA)
FREQUENCY RESPONSE
I
F
= 1 mA
V
CE
= 2 V
T
A
= 25 ˚C
0
Switching Time, t
(µs)
500
t
off
Voltage Gain, A
V
(dB)
-5
t
f
100
50
t
r
-10
-15
R
L
= 100
Ω
-20
10
50
100
500
1k
2k
0.2
0.5
1
2
5
10
20
50
100 200
Load Resistance, R
L (
Ω
)
Frequency, f (kHz)
PS2603, PS2603L, PS2604, PS2604L
TYPICAL PERFORMANCE CURVES
(T
A
= 25°)
CTR DEGRADATION
1.2
CTR Test condition
I
F
= 1 mA
1.0
∆CTR,
Normalized
T
A
= 25 ˚C
0.8
T
A
= 60 ˚C
0.6
0.4
0.2
0
10
10
2
10
3
10
4
10
5
10
6
Time, Hr
OUTLINE DIMENSIONS
(Units in mm)
PS2603, PS2604
10.16 MAX
6
4
6
PS2603L, PS2604L
10.16 MAX
4
φ
1
φ
1
3.8
MAX
1
3
7.62
6.5
1
3
7.62
2.8 MIN 4.55 MAX
0.65
1.34
2.54
0.50 ± 0.10
2.54
MAX
0 to 15˚
0.25 M
3.8 MAX
2.54
1.34 ± 0.10
2.54
MAX
0.25 M
0.05 to 0.2
6.5
0.9± 0.25
9.60 ± 0.4
PIN CONNECTIONS
(Top View)
PS2603, PS2603L
PS2604, PS2604L
6
5
4
1.
2.
3.
4.
5.
6.
Anode
Cathode
NC
Emitter
Collector
Base
6
5
4
1.
2.
3.
4.
5.
6.
Anode
Cathode
NC
Emitter
Collector
NC
1
2
3
1
2
3
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
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