DATA SHEET
PHOTOCOUPLERS
PS2503 -1, -2, -4
PS2503L-1, -2, -4
LOW INPUT CURRENT, HIGH SPEED SWITCHING
MULTI PHOTOCOUPLER SERIES
DESCRIPTION
PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically coupled isolator containing a GaAs light emitting diode
and an NPN silicon phototransistor.
PS2503-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2503L-1, -2, -4 are lead bending type (Gull-
wing) for surface mount.
FEATURES
• High isolation voltage (BV: 5 000 V
r.m.s.
MIN.)
• High speed switching (t
r
= 20
µ
s, t
f
= 30
µ
s TYP., @R
L
= 10 kΩ)
• High current transfer ratio (CTR: 100 % MIN. @I
F
= 1 mA, V
CE
= 5 V)
• Taping Product number (PS2503L-1-E3, E4, F3, F4)
(PS2503L-2-E3, E4)
• UL recognized [File No. E72422(S)]
APPLICATIONS
Interface circuit for various instrumentations, control equipments.
• AC Line/Digital Logic .................................................. Isolate high voltage transients
• Digital Logic/Digital Logic ........................................... Eliminate spurious ground loops
• Twisted pair line receiver ........................................... Eliminate ground look pick-up
• Telephone/Telegraph line receiver ............................ Isolate high voltage transients
• High Frequeny Power Supply Feedback Control ...... Maintain floating ground
• Relay Contact Monitor ................................................ Isolate floating grounds and transients
• Power Supply Monitor ................................................ Isolate transients and ground systems
Document No. P11304EJ3V0DS00 (3rd edition)
(Previous No. LC-2305A)
Date Published February 1996 P
Printed in Japan
©
1993
PS2503-1, -2, -4, PS2503L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
(PS2503-1)
(PS2503L-1)
Diode
Reverse Voltage
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
(PW = 100
µ
s, Duty Cycle 1 %)
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Coupled
Isolation Voltage
*1
Storage Temperature
Operating Temperature
Lead Temperature (Soldering 10 s)
BV
T
stg
T
opt
T
sol
5 000
–55 to +150
–55 to +100
260
5 000
–55 to +150
–55 to +100
260
V
r.m.s.
°C
°C
°C
V
CEO
V
ECO
I
C
∆P
C
/˚C
P
C
40
0.6
30
1.5
150
40
0.6
30
1.2
120
V
V
mA
mW/˚C
mW/Channel
V
R
I
F
∆P
D
/˚C
P
D
I
F(Peak)
6
80
1.5
150
1
6
80
1.2
120
1
V
mA
mW/˚C
mW/Channel
A
(PS2503-2, 4)
(PS2503L-2, 4)
*1
AC voltage for 1 minute at T
A
= 25
°C,
RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Forward Voltage
Diode
Reverse Current
Junction Capacitance
Transistor
Collector to Emitter Dark Current
Current Transfer Ratio*
2
Collector Saturation Voltage
Coupled
Isolation Resistance
Isolation Capacitance
Rise Time*
3
Fall Time*
3
SYMBOL
V
F
I
R
C
t
I
CEO
CTR
V
CE(sat)
R
1-2
C
1-2
t
r
t
f
10
11
0.5
20
30
100
200
50
100
400
0.25
MIN.
TYP.
1.1
MAX.
1.3
5
UNIT
V
TEST CONDITIONS
I
F
= 1 mA
V
R
= 5 V
V = 0, f = 1 MHz
V
CE
= 40 V, I
F
= 0
I
F
= 1 mA, V
CE
= 5 V
I
F
= 1 mA, I
C
= 0.2 mA
V
in-out
= 1 kV
V = 0, f = 1 MHz
V
CC
= 5 V, I
F
= 1 mA, R
L
= 10 kΩ
V
CC
= 5 V, I
F
= 1 mA, R
L
= 10 kΩ
µ
A
pF
nA
%
V
Ω
pF
µ
s
µ
s
*2
CTR rank (only PS2503-1, PS2503L-1)
K : 200 to 400
L : 150 to 300
M : 100 to 200
*3
Test Circuit for Switching Time
PULSE INPUT
PW = 100
µ
s
Duty Cycle
= 1/10
V
CC
I
F
V
OUT
50
Ω
R
L
= 10 kΩ
2
PS2503-1, -2, -4, PS2503L-1, -2, -4
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
P
C
- Transistor Power Dissipation - mW
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
P
D
- Diode Power Dissipation - mW
PS2503-1
PS2503L-1
100
1.5 mW / °C
PS2503-2
PS2503-4
PS2503L-2
PS2503L-4
50
1.2 mW / °C
PS2503-1
PS2503L-1
100
1.5 mW / °C
PS2503-2
PS2503-4
PS2503L-2
PS2503L-4
50
1.2 mW / °C
0
25
50
75
100
125
150
0
25
T
A
- Ambient Temperature - ˚C
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
I
C
- Collector Current - mA
50
75
100
125
T
A
- Ambient Temperature - ˚C
150
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12
10
5 mA
100 °C
60 °C
25 °C
0 °C
–25 °C
–55 °C
4 mA
3 mA
2 mA
I
F
- Forward Current - mA
10
5
8
6
1.5 mA
4
1 mA
0.8 mA
I
F
= 0.6 mA
2
4
6
8
10
1
0.5
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
2
V
F
- Forward Voltage - V
0
V
CE
- Collector to Emitter Voltage - V
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
100
I
CEO
- Collector to Emitter Dark Current - nA
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
30
10 mA
50
10
I
C
- Collector Current - mA
10
5.0
V
CE
= 40 V
30 V
20 V
10 V
5 mA
5
2 mA
1 mA
1.0
0.5
I
F
= 0.8 mA
1.0
0.3
0.1
–25
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1.0
T
A
- Ambient Temperature - ˚C
V
CE(sat)
- Collector tSaturation Voltage - V
3
PS2503-1, -2, -4, PS2503L-1, -2, -4
400
CTR - Current Transfer Ratio - %
CURRENT TRANSFER RATIO (CTR) vs.
FORWARD CURRENT
1.4
CTR - Normalized Output current
NORMALIZED OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
Normalized to 1.0
at T
A
= 25 °C
I
F
= 1 mA, V
CE
= 5 V
1.2
1.0
0.8
0.6
0.4
0.2
300
200
100
0
0.3 0.5
0
1
5
10
50
100
I
F
- Forward Current - mA
30
0
25
50
75
100
T
A
- Ambient Temperature - ˚C
SWITCHING TIME vs. LOAD RESISTANCE
50
500
SWITCHING TIME vs. AMBIENT TEMPERATURE
Sample CTR = 290 %
V
CC
= 5 V
I
F
= 1 mA
R
L
= 10 kW
t
f
t
s
t
r
10
5
t
d
10
t - Switching Time -
µ
s
t
r
100
t
d
t
f
I
F
= 1 mA, V
CC
= 5 V
Sample : CTR 209 %
at I
F
= 1 mA
I
F
V
CC
t
s
50
Ω
V
O
R
L
50 k 100 k
1
–50
–25
0
25
t - Switching Time -
µ
s
5
50
1
0.5
0.1
100
500 1 k
5 k 10 k
50
75
100
R
L
- Load Resistance -
Ω
T
A
- Ambient Temperature - ˚C
FREQUENCY
A
V
- Relative Voltage Gain - dB
LONG TERM CTR DEGRADATION
V
CC
= 5 V
Sample
CTR = 209 %
1.2
TYP.
1.0
CTR - Normalized
0
3.0
6.0
9.0
12.0
15.0
100
1k
10 k
5.6 k
0.8
0.6
0.4
0.2
0
10
2
1k
100
I
F
= 5 mA
T
A
= 25 °C
I
F
= 5 mA
T
A
= 60 °C
100 k
1M
f - Frequency - Hz
10
3
Time - Hr
10
4
10
5
4
PS2503-1, -2, -4, PS2503L-1, -2, -4
SOLDERING PRECAUTION
(1) Infrared reflow soldering
•
•
•
•
Peak reflow temperature
Reflow time
Number of reflow processes
Flux
: 235
°C
or below (Plastic surface temperature)
: 30 seconds or less (Time period during which the plastic surface
temperature is 210
°C)
: Three
: Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
REFLOW TEMPERATURE PROFILE
PACKAGE’S SURFACE TEMPERATURE (
o
C)
(ACTUAL HEAT)
to 10 s
235
o
C MAX
210
o
C
120 to 160
o
C
to 30 s
60 to 90 s
(PRE-HEAT)
TIME (s)
Peak Temperature 235 °C or Lower
(2) Dip soldering
•
•
•
Peak temperature
Time
Flux
: 260
°C
or lower
: 10 s or less
: Rosin-base flux
5
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