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ZTX704M1

Description
obsolete
CategoryDiscrete semiconductor    The transistor   
File Size73KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZTX704M1 Overview

obsolete

ZTX704M1 Parametric

Parameter NameAttribute value
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PSSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Certification statusNot Qualified
GuidelineCECC
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
VCEsat-Max2.5 V
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3 – MAY 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
C
=1 Amp
* P
tot
=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
ZTX704
ZTX705
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX704
-120
-100
E-Line
TO92 Compatible
ZTX705
-140
-120
-10
-4
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
ZTX704
MIN.
-120
-100
-10
-0.1
-10
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
-10
-0.1
-1.3
-2.5
-1.8
-1.7
3-250
ZTX705
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-100V
V
CB
=-120V
V
CB
=-100V,
T
amb
=100°C
V
CB
=-120V,
T
amb
=100°C
V
CES
=-80V
V
EB
=-8V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
I
C
=-1A, I
B
=-10mA*
IC=-1A, V
CE
=-5V*
MAX. MIN.
-140
-120
-10
-0.1
-10
-10
-0.1
-1.3
-2.5
-1.8
-1.7
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
V
V
V

ZTX704M1 Related Products

ZTX704M1 ZTX704M1TA ZTX705STZ
Description obsolete obsolete Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PSSO-G3 SMALL OUTLINE, R-PSSO-G3 IN-LINE, R-PSIP-W3
Reach Compliance Code unknown unknown _compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 100 V 100 V 120 V
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 2000 3000 2000
JESD-30 code R-PSSO-G3 R-PSSO-G3 R-PSIP-W3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal form GULL WING GULL WING WIRE
Terminal location SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON
VCEsat-Max 2.5 V 1.3 V 1.3 V
Maximum power consumption environment 2.5 W - 2.5 W
Guideline CECC - CECC
transistor applications SWITCHING - SWITCHING
Nominal transition frequency (fT) 160 MHz - 160 MHz
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