ZVN4206AVSTOB datasheet, PDF - EEWORLD Datasheet

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ZVN4206AVSTOB: Descriptionmosfet small signal avalanche; Categorysemiconductor Discrete semiconductor; File Size97KB，3 Pages; ManufacturerAll Sensors; Environmental Compliance

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ZVN4206AVSTOB Overview

mosfet small signal avalanche

ZVN4206AVSTOB Parametric

Parameter Name	Attribute value
Maker	All Sensors
Product Category	MOSFET small signal
RoHS	yes
Configuration	Single
Transistor polarity	N-Channel
Resistor drain/source RDS (on)	1.5 Ohms
Drain/source breakdown voltage	60 V
Gate/source breakdown voltage	+/- 20 V
Drain continuous current	600 mA
Power dissipation	0.7 W
Maximum operating temperature	+ 150 C
Installation style	Through Hole
Package/box	TO-92
Encapsulation	Bulk
Minimum operating temperature	- 55 C

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – JUNE 94

FEATURES

* 60 Volt V

* R

DS(on)

= 1

Ω

ZVN4206A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

E-LINE

TO92 COMPATIBLE

VALUE

UNIT

°C

600

0.7

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

300

100

1.5

1.3

100

MAX. UNIT CONDITIONS.

µA

Ω

≈25V,

=1.5A

=25V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=60V, V

=48V, V

=0V, T=125°C

(2)

=25V, V

=10V

=10V,I

=1.5A

=5V,I

=500mA

=25V,I

=1.5A

Forward Transconductance(1)(2 g

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

ZVN4206AVSTOB Related Products

	ZVN4206AVSTOB	ZVN4206ASTOB	ZVN4206AVSTOA	ZVN4206ASTOA
Description	mosfet small signal avalanche	mosfet small signal N-chnl 60v	mosfet small signal avalanche	mosfet small signal N-chnl 60v
Maker	All Sensors	All Sensors	All Sensors	All Sensors
Product Category	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal
RoHS	yes	yes	yes	yes
Configuration	Single	Single	Single	Single
Transistor polarity	N-Channel	N-Channel	N-Channel	N-Channel
Resistor drain/source RDS (on)	1.5 Ohms	1.5 Ohms	1.5 Ohms	1.5 Ohms
Drain/source breakdown voltage	60 V	60 V	60 V	60 V
Gate/source breakdown voltage	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V
Drain continuous current	600 mA	600 mA	600 mA	600 mA
Power dissipation	0.7 W	0.7 W	0.7 W	0.7 W
Maximum operating temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Installation style	Through Hole	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92	TO-92
Encapsulation	Bulk	Bulk	Bulk	Bulk
Minimum operating temperature	- 55 C	- 55 C	- 55 C	- 55 C

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