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ZTX652STOA

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size61KB,3 Pages
ManufacturerAll Sensors
Download Datasheet Parametric Compare View All

ZTX652STOA Overview

Bipolar small signal -

ZTX652STOA Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityNPN
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO80 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current2 A
Power dissipation1000 mW
Maximum operating frequency175 MHz (Typ)
Maximum operating temperature+ 200 C
Minimum operating temperature- 55 C
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX652
ZTX653
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX653
MAX. MIN. TYP.
120
100
5
0.1
10
I
EBO
0.13
0.23
0.9
0.8
0.1
0.3
0.5
1.25
1
0.13
0.23
0.9
0.8
MAX.
ZTX652
100
80
5
6
2
1
5.7
E-Line
TO92 Compatible
ZTX653
120
100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
ZTX652
MIN. TYP.
100
80
5
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=80V
V
CB
=100V
V
CB
=80V,
T
amb
=100°C
V
CB
=100V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
0.1
10
0.1
0.3
0.5
1.25
1
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
V
V
3-222

ZTX652STOA Related Products

ZTX652STOA ZTX652 ZTX652STOB ZTX652STZ
Description Bipolar small signal - Digital transistor - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity NPN NPN NPN NPN
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Collector-emitter maximum voltage VCEO 80 V 80 V 80 V 80 V
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating frequency 175 MHz (Typ) 175 MHz (Typ) 175 MHz (Typ) 175 MHz (Typ)
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
Emitter-Base voltage VEBO 5 V - 5 V 5 V
Maximum DC collector current 2 A - 2 A 2 A
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