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ZXT10N50DE6TC

Description
Bipolar small signal 50v npn supersot4
Categorysemiconductor    Discrete semiconductor   
File Size223KB,6 Pages
ManufacturerAll Sensors
Environmental Compliance
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ZXT10N50DE6TC Overview

Bipolar small signal 50v npn supersot4

ZXT10N50DE6TC Parametric

Parameter NameAttribute value
MakerAll Sensors
Product Categorybipolar small signal
RoHSyes
ConfigurationSingle Quad Collec
Transistor polarityNPN
Installation styleSMD/SMT
Package/boxSOT-23-6
Collector-emitter maximum voltage VCEO50 V
Emitter-Base voltage VEBO5 V
Collector continuous current3 A
Maximum DC collector current3 A
Power dissipation1.1 W
Maximum operating frequency165 MHz (Typ)
Maximum operating temperature+ 150 C
EncapsulationReel
Minimum operating temperature- 55 C
ZXT10N50DE6
SuperSOT™
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 75m ; I
C
= 3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 12A
I
C
=3A Continuous Collector Current
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXT10N50DE6TA
ZXT10N50DE6TC
DEVICE MARKING
619
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
C
C
B
Top View
C
C
E
10000 units
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