Paper sensors
KODENSHI
PS-R50L S-R50D
・P
DIMENSIONS
The PS-R50 photo switches are composed of a
modulated infrared emitting diode at the light-emitting
side and a modulated photo IC (in which a
photodiode,signal processing circuit,constant voltage
circuit and modulation circuit are integrated) at the light
receiving side.
PS-R50L : High level output at shielding
PS-R50D : Low level output at shielding
(Unit : mm)
FEATURES
•High-speed response(0.5m sec.)
•Adjustable of detecting distance
•Resistible to exterior light because of composed of
modulate
APPLICATIONS
•Copiers
•Facsimiles
MAXIMUM RATINGS
Item
Supply voltage
Output voltage
*1
Low level output current
*2
Output transistor power dissipation
Operating temp.
*3*4
Storage temp.
*3*4
(Ta=25℃)
Symbol
V
CC
V
O
I
OL
P
O
Topr.
Tstg.
Rating
8.0
12
30
30
－10½＋60
－20½＋70
Unit
V
V
mA
mW
℃
℃
C
C
*1. Output transistor : V
E
*2. Output transistor : I *3. No icebound or dew
*4. The connector shall be inserted or pulled out at normal temperature.
ELECTRO-OPTICAL CHARACTERISTICS
Item
Supply voltage
Low level output voltage
High level output voltage
Supply current
Minimum detecting distance
Maximum detecting distance
Non-detecting distance
Response speed
Exterior light endure
Output state
（Ta=25℃）
Symbol
V
CC
V
OL
V
OH
I
CC
L
DS
L
DL
L
NS
t
PLH
/t
PHL
E
V
Conditions
V
CC
=5V,I
OL
=10mA
V
CC
=5V,R
L
=1kΩ
V
CC
=5V
Kodak 90%
V
CC
=5V,R
L
=1kΩ
Kodak 90%
Min.
4.75
4.0
Typ.
Max.
5.25
0.4
Unit.
V
V
V
mA
mm
mm
16
2
6
25
0.5
3,000
NPN open collector
Kodak 90%
V
CC
=5V,R
L
=1kΩ
V
CC
=5V,R
L
=1kΩ
mm
ms
lx
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