ZDT1048
SM-8 Dual NPN medium power high gain transistors
Summary
BV
CEO
> 17.5V
I
C(cont)
= 5A
V
CE(sat)
< 75mV @ 1A
P
D
= 2.75W
Description
Advanced process capability has been used to achieve
this high performance device. Combining two NPN
transistors in the SM-8 package provides a compact
solution for the intended applications.
C1
C2
B1
B2
Features
•
•
•
•
Dual NPN device
Very low saturation voltage
High gain
SM 8 package
E1
E2
Applications
•
•
CCFL invertors
Royer circuits
Ordering information
DEVICE
ZDT1048TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Device marking
T1048
Issue 2 - December 2007
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ZDT1048
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Base current
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
T
j
:T
stg
Value
50
17.5
5
20
5
500
-55 to +150
Unit
V
V
V
A
A
mA
°C
Thermal Characteristics
Parameter
Total power dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal resistance - junction to ambient*
Any single die “on”
Both die “on” equally
Symbol
P
tot
Value
2.25
2.75
18
22
55.6
45.5
Unit
W
W
V
mW/°C
mW/°C
°C/W
°C/W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to
2 inches square.
Issue 2 - December 2007
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ZDT1048
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Symbol
Min.
50
50
17.5
50
5
Typ.
85
85
24
85
8.7
0.3
0.3
0.3
27
55
120
200
200
1000
900
280
300
300
250
50
440
450
450
300
80
150
60
120
250
80
10
10
10
45
75
160
240
300
1100
1000
Max.
Unit
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
Conditions
I
C
=100µA
I
C
=100µA
I
C
=10mA
I
C
=100µA, V
EB
=1V
I
E
=100µA
V
CB
=35V
V
EB
=4V
I
CES
=35V
I
C
=0.5A, I
B
=10mA
(*)
I
C
=1A, I
B
=10mA
(*)
I
C
=2A, I
B
=10mA
(*)
I
C
=5A, I
B
=100mA
(*)
I
C
=5A, I
B
=50mA
(*)
I
C
=5A, I
B
=100mA
(*)
I
C
=5A, V
CE
=2V
(*)
I
C
=10mA, V
CE
=2V
(*)
I
C
=0.5A, V
CE
=2V
(*)
I
C
=1A, V
CE
=2V
(*)
I
C
=5A, V
CE
=2V
(*)
I
C
=20A, V
CE
=2V
(*)
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz
I
C
=4A, I
B
=40mA,V
CC
=10V
I
C
=4A, I
B
=±40mA,V
CC
=10V
Collector-base breakdown V
(BR)CBO
voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter cut-off
current
Collector-emitter
saturation voltage
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
Base-emitter saturation
voltage
Base-emitter turn on
voltage
Static forward
current transfer
ratio
V
BE(sat)
V
BE(on)
h
FE
1200
Transition frequency
Output capacitance
Switching times
f
T
C
obo
t
on
t
off
NOTES:
(*) Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Issue 2 - December 2007
© Zetex Semiconductors plc 2007
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ZDT1048
Typical characteristics
Issue 2 - December 2007
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ZDT1048
Package outline - SM8
DIM
Min.
A
A1
b
c
D
E
-
0.02
-
0.24
6.3
3.3
Millimeters
Max.
1.7
0.1
-
0.32
6.7
3.7
Typ.
-
-
0.7
-
-
-
Min.
-
0.0008
-
0.009
0.248
0.130
Inches
Max.
0.067
0.004
-
0.013
0.264
0.145
Typ.
-
-
0.0275
-
-
-
DIM
Min.
e1
e2
He
Lp
-
-
6.7
0.9
-
-
Millimeters
Max.
-
-
7.3
-
15°
-
Typ.
4.59
1.53
-
-
-
10°
Min.
-
-
0.264
0.035
-
-
Inches
Max.
-
-
0.287
-
15°
-
Typ.
0.1807
0.0602
-
-
-
10°
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 2 - December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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