SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 2 - October 1997
7
1
ZHCS750
C
1
FEATURES:
*
Low V
F
*
High Current Capability
APPLICATIONS:
*
DC - DC converters
*
Mobile telecomms
*
PCMCIA
PARTMARK DETAIL: ZS7
2
A
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
F
= 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
40
750
490
1500
12
5.2
500
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
40
TYP.
60
225
235
290
340
390
440
530
50
25
12
280
310
350
420
490
540
650
100
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
µA
pF
ns
CONDITIONS.
I
R
= 300µA
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
50mA*
100mA*
250mA*
500mA*
750mA*
1000mA*
1500mA*
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
V
R
= 30V
f= 1MHz,V
R
= 25V
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle
≤2%
.
ZHCS750
TYPICAL CHARACTERISTICS
10
100m
I
F
- Forward Current (A)
I
R
- Reverse Current (A)
Typical
10m
+125°C
1
1m
100µ
+100°C
+50°C
10µ
1µ
100n
+25°C
0.1
+125°C
+25°C
-55°C
-55°C
0.01
0
0.2
0.4
0.6
0.8
10n
0
10
20
30
V
F
- Forward Voltage (V)
I
F
v V
F
V
R
- Reverse Voltage (V)
I
R
v V
R
I
F(av)
Average Forward Current (A)
Typical
t1
D=t
1
/t
P
F(av
)
Average Power Dissipation (mW)
1.2
p
0.5
Typical
Tj=125°C
I
F(pk)
DC
0.4
0.3
t1
D=t
1
/t
p
I
F(pk)
tp
I
F(av)
=D x I
F(pk)
0.8
D=0.5
tp
I
F(av)
=D x I
F(pk)
D=0.2
0.2
0.1
0
0
0.4
DC
D=0.5
D=0.2
D=0.1
D=0.05
0.4
D=0.1
D=0.05
0
75
85
95
105
115
125
P
F(av)
=I
F(av)
x V
F
0.8
1.2
TC - Case Temperature (°C)
I
F(av)
v T
C
I
F(av)
Average Forward Current (A)
P
F(av)
v I
F(av)
125
Typical
200
100
R
th
=100° C/W
R
th
=200°C/W
R
th
=300° C/W
C
D
- Diode Capacitance (pF)
T
a
- Ambient Temp (° C)
100
75
1
10
100
0
0
10
20
30
V
R
- Reverse Voltage (V)
T
a
v V
R
V
R
- Reverse Voltage (V)
C
D
v V
R
ZHCS750
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
Automotive Electronics
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