2SC3303 datasheet, PDF - EEWORLD Datasheet

2SC3303: Descriptionnpn epitaxial type (high current switcing applications); CategoryDiscrete semiconductor The transistor; File Size196KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC3303 Overview

npn epitaxial type (high current switcing applications)

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1 W
Maximum power dissipation(Abs)	20 W
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
VCEsat-Max	0.4 V
Base Number Matches	1

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