MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5209/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N5209
2N5210
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
50
50
4.0
50
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
ICBO
IEBO
50
50
—
—
—
—
50
50
Vdc
Vdc
nAdc
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
2N5209 2N5210
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
µAdc,
VCE = 5.0 Vdc)
hFE
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
VCE(sat)
VBE(on)
100
200
150
250
150
250
—
—
300
600
—
—
—
—
0.7
0.85
Vdc
Vdc
—
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500
µAdc,
VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 20
µAdc,
VCE = 5.0 Vdc, RS = 22 kΩ,
f = 1.0 kHz)
(IC = 20
µAdc,
VCE = 5.0 Vdc, RS = 10 kΩ,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
2N5209
2N5210
NF
2N5209
2N5210
2N5209
2N5210
—
—
—
—
3.0
2.0
4.0
3.0
fT
Ccb
hfe
150
250
600
900
dB
30
—
—
4.0
MHz
pF
—
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N5209 2N5210
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
IC = 10 mA
3.0 mA
1.0 mA
RS
≈
0
20
RS
≈
0
f = 10 Hz
10
7.0
10 kHz
5.0
1.0 kHz
100 Hz
30
BANDWIDTH = 1.0 Hz
10
7.0
5.0
300
µA
3.0
10
20
50 100 200
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
3.0
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
100 kHz
5.0
10
Figure 2. Effects of Frequency
10
7.0
5.0
In, NOISE CURRENT (pA)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
RS
≈
0
20
10
µA
50 100 200
3.0 mA
1.0 mA
300
µA
100
µA
30
µA
0
10
20
20
16
NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
IC = 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
12
500
µA
100
µA
4.0
10
µA
IC = 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current
100 Hz NOISE DATA
300
200
VT, TOTAL NOISE VOLTAGE (nV)
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
20
BANDWIDTH = 1.0 Hz
100
µA
3.0 mA
1.0 mA
300
µA
30
µA
10
µA
IC = 10 mA
16
NF, NOISE FIGURE (dB)
Figure 5. Wideband Noise Figure
IC = 10 mA
3.0 mA
1.0 mA
300
µA
12
8.0
100
µA
4.0
BANDWIDTH = 1.0 Hz
0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
30
µA
10
µA
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
2N5209 2N5210
h FE, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
0.7
0.5
0.4
0.3
0.2
0.01
– 55°C
0.02
0.03
0.05
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
R
θ
VBE, BASE–EMITTER
TEMPERATURE COEFFICIENT (mV/
°
C)
– 0.4
– 0.8
0.6
VBE @ VCE = 5.0 V
– 1.2
0.4
– 1.6
TJ = 25°C to 125°C
0.2
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
100
– 2.0
– 55°C to 25°C
– 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. “On” Voltages
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 10. Temperature Coefficients
8.0
6.0
C, CAPACITANCE (pF)
4.0
3.0
2.0
Cob
Ccb
Ceb
Cib
TJ = 25°C
500
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
VCE = 5.0 V
TJ = 25°C
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N5209 2N5210
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
A
R
P
SEATING
PLANE
B
F
L
K
D
X X
G
H
V
1
J
C
N
N
SECTION X–X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
京公网安备 11010802033920号
EEWORLD
